Table 2.
Components used to fabricate and test the prototype Q4HGC.
| Circuit element | Device type | Part number (specifications) |
|---|---|---|
| Switch (S1, S2) | MOSFET | IRFB4410Z (100 V, 88 A, 8 mΩ) |
| Switch (S3) | MOSFET | NTHL041N60S5H (600 V, 57 A, 33 mΩ) |
| Diodes (D2,D1) | Fast recovery diode | DSS 16–01 A (100 V, 16 A, 0.64 V) |
| Diodes (D2,D4, D5,D6) | Fast recovery diode | MUR1540 (400 V,15 A, 1.05 V) |
| Diode (D3) | Fast recovery diode | MUR1520 (200 V, 15 A, 0.85 V) |
| Diode (D7) | Fast recovery diode | BYV29X-600 (600 V, 9 A, 1.26 V) |
| Inductors (L1, L2, L3) | Ferrite core | PCV2-104–10 L (100 µH, 10 A) |
| Inductor (L4) | Ferrite core | PCV2-564–6 L (564 µH, 6 A) |
| Inductor (L5) | Ferrite core | PCV2-105–02 L (1 mH, 2 A) |
| Capacitors (Clift, C2, C3,C4) | Polypropylene | Film Capacitor (3.3 µF, 250 V) |
| Capacitor (C0) | Electrolytic | B43644J65 66M067 (56 µF, 500 V) |
| Capacitor (C1) | Electrolytic | EKMG101ELL101MJ20S (100 µF, 100 V) |