Table 4.
Comparative metrices related to voltage stress of the devices used in the proposed Q4HGC and some similar converters.
| Attributes | Converter presented in | Proposed Q4HGC | |||||
|---|---|---|---|---|---|---|---|
| 31 | 34 | 35 | 36 | 37 | 39 | ||
| SVS = Vsw/Vin |
|
|
|
|
|
|
|
| NSVS (%) | 38.75 | 50 | 100 | 61 | 100 | 100 | 100 |
| NDVS (%) | 92 | 50 | 100 | 61 | 100 | 100 | 100 |
| TVS (%) | 247.7 | 298 | 337 | 303 | 429 | 345 | 404 |
| NTVS (%) | 41.28 | 37.41 | 56.27 | 45.46 | 53.63 | 43.4 | 40.4 |
| Effective ness index (M/NTVS) | 0.36 | 0.38 | 0.32 | 0.72 | 0.25 | 0.49 | 0.62 |
| Input current ripple (% of Iin) | 133 | 18 | 200 | 200 | 200 | 3.43 | 3.25 |
SVS switch voltage stress, NSVS normalized switch voltage stress, NDVS normalized diode voltage stress, TVS total voltage stress, NTVS normalized total voltage stress.






