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. 2025 Jan 6;15:988. doi: 10.1038/s41598-024-78862-w

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© The Author(s) 2025

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 7 — Sensitivity of energy yield to ambient temperature. Individual panels in the bottom row compare the energy yield of CIGS and c-Si in different system configurations and climatic conditions. The x-axis represents the Gpoa-corrected ambient temperature for the simulation scenario. It is calculated using the formula $T_{a m b_g p o a} = \frac{\sum T_{amb} \cdot G_{poa}}{\sum G_{poa}}$ . The respective top-row panels show the yield difference between the two technologies.