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. 2024 Dec 25;15(1):7. doi: 10.3390/nano15010007

Table 1.

Comparison of material properties for β-Ga2O3 single crystals with and without the pre-melting process obtained via Hall and C−V measurements.

Property Without Pre-Melting With Pre-Melting Remark
Carrier concentration (cm−3) 8.1 × 1018 3.5 × 1018 Hall
1.7 × 1019 1.0 × 1018 C−V
Mobility (cm2/V·s) 58 79.1 Hall
Resistivity (Ω·cm) 1.3 × 10−2 2.3 × 10−2 Hall