Table 1.
Comparison of material properties for β-Ga2O3 single crystals with and without the pre-melting process obtained via Hall and C−V measurements.
Property | Without Pre-Melting | With Pre-Melting | Remark |
---|---|---|---|
Carrier concentration (cm−3) | 8.1 × 1018 | 3.5 × 1018 | Hall |
1.7 × 1019 | 1.0 × 1018 | C−V | |
Mobility (cm2/V·s) | 58 | 79.1 | Hall |
Resistivity (Ω·cm) | 1.3 × 10−2 | 2.3 × 10−2 | Hall |