Table 2.
Comparison of the developed resonators and filters with the existing state-of-the-art
| Reference | P3F material |
Fully CMOS compatible | Resonator performance | Filter | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Freq. (GHz) |
A/p ratio |
Type | Qs | Qp | (%) | IL (dB) | BW (%) | Rejection (dB) | IIP3 (dBm) | ||||
| Lu et al.35 | LiNbO3 | Non-CMOS | 19.5 | 29 | – | NR | 445 | 1.26 | 5.6 | 7.86 | 0.21 | – | – |
| Kramer et al.17 | LiNbO3 | Non-CMOS | 19.2 | – | – | 55 | – | 40 | 22 | – | – | – | – |
| Barrera et al.16 | LiNbO3 | Non-CMOS | 19.8 | – | Shunt | 40 | – | 44 | 17.6 | 2.38 | 18.2 | 13 | 8 |
| Barrera et al.36 | LiNbO3 | Non-CMOS | 38.2 | – | Shunt | 13 | – | 30 | 38.7 | 5.63 | 17.6 | 10.2 | – |
| Mo et al.18 | AlScN | CMOS | 13.9 | – | Series | 151 | NR | 10.7 | 16.2 | – | – | – | – |
| Kochhar et al.20 | AlScN | CMOS | 10.72 | – | Shunt | 347 | 789 | 10 | 79 | 0.7 | 4.7 | 6 | – |
| Izhar et el.21 | AlScN | CMOS | 20 | 16 | Series | 92 | 160 | 8.23 | 13.2 | – | – | – | – |
| Vetury et al.19 | AlScN | CMOS | 18.4 | – | Series | 180 | 260 | 7.6 | 20 | – | – | – | – |
| Schaffer et al.37 | AlN | CMOS | 55.7 | 2.7 | Series | 93 | 89 | 2.2 | 2.1 | – | – | – | – |
| Cho et al.38 | AlScN | CMOS | 21 | 2.3 | Series | 62 | 32 | 6.4 | 2.1 | – | – | – | – |
| AlScN | CMOS | 55.4 | 2.3 | Series | 30 | 27 | 3.8 | 1.1 | – | – | – | – | |
| This work | AlScN | CMOS | 17.4 | 22.2 | Series | 58.4 | 236.6 | 11.8 | 27.9 | 3.25 | 3.4 | 16.6 | >40 dBm |