Table 6. Parameters used in device simulation.

Parameters	FTO25	CdS-0 (ref. 52 and 53)	CdS-1 (ref. 52 and 53)	CdS-2 (ref. 52 and 53)	CdS-3 (ref. 52 and 53)	CsSnBr3 (ref. 54)	P3HT55,56
d (nm)	200	92.30 (exp.)	96.02 (exp.)	100.5 (exp.)	89.32 (exp.)	450	50
E g (eV)	3.5	2.44 (exp.)	2.44 (exp.)	2.45 (exp.)	2.45 (exp.)	1.75	1.85
χ (eV)	4	4.45	4.45	4.45	4.45	4.07	3.5
ε r	9	10	10	10	10	5.9	3.4
N C (cm−3)	2.2 × 1017	2.2 × 1018	2.2 × 1018	2.2 × 1018	2.2 × 1018	1 × 1018	1 × 1022
N V (cm−3)	2.2 × 1016	1.9 × 1019	1.9 × 1019	1.9 × 1019	1.9 × 1019	1 × 1018	1 × 1022
V th e− (cm s−1)	1 × 107	1 × 107	1 × 107	1 × 107	1 × 107	1 × 107	1 × 107
V th p (cm s−1)	1 × 107	1 × 107	1 × 107	1 × 107	1 × 107	1 × 107	1 × 107
μ e (cm2 V−1 s−1)	20	16.1(exp.)	4.84 (exp.)	16.5 (exp.)	3.15 (exp.)	1 × 10−1	1 × 10−4
μ p (cm2 V−1 s−1)	10	4.025	1.21	4.125	0.787	1 × 10−1	1 × 10−3
N A (cm−3)	—	—	—	—	—	7 × 1016	3.17 × 1013
N D (cm−3)	1 × 1020	1.92 × 1014 (exp.)	2.69 × 1014 (exp.)	7.51 × 1014 (exp.)	4.26 × 1014 (exp.)	—	—
N t (cm−3)	—	—	—	—	—	1 × 1014	—