Table 1.
Unique physical properties of 2D materials used for various applications
| Material | Physical properties | Applications |
|---|---|---|
| Graphene | Fast carrier mobility | Ultrafast photodetectors [24] and lasers [25] |
| Bandgap:0 eV | Broadband photodetectors[26] (UV to infrared) | |
| Ultrafast carrier relaxation time | High-speed optical communication [27], imaging in security [28], and medical diagnostics [29] | |
| Exceptionally low noise | Detection of single gas molecules [30] | |
| High tensile strength (~ 130 GPa) | Aerospace and automotive industry [31] | |
| High surface area (~ 2630 m2 g−1) | Energy storage devices like supercapacitors and batteries [32] | |
| TMDs | Tunable bandgaps (Bandgap: 1–2.5 eV) | Low-power, high-efficiency digital electronics [33] |
| High absorption coefficient (absorption up to 20% of incident light) | Solar cells [34] and photodetectors [35] | |
| Strong spin–orbit coupling | Spintronic [36] and valleytronic [37] | |
| High surface reactivity | Hydrogen evolution reaction (HER) in water splitting [38] | |
| Hexagonal Boron Nitride (h-BN) | Atomically flat surface | Surve as perfect substrate for epitaxial growth of other 2D materials [39] |
| Large bandgap (~ 5.9 eV) | Excellent electrical insulator [40] | |
| High mechanical strength | Protective coating and support material for other 2D materials [41] | |
| High breakdown voltage | Gate dielectrics in transistors [42] | |
| Resistance to radiation damage | Ideal for space applications and nuclear technology [43] | |
| Phosphorene | Tunable bandgaps (Bandgap: 0.3–2 eV) | Solar cells [44] and spintronics [45] |
| Ambipolar conduction | Used in optoelectronics and logic circuits for efficient charge transport [46] | |
| Strong light absorption | Useful in photodetectors and solar cells [47] | |
| Photoluminescence | Light-emitting diodes (LEDs) and lasers [5] | |
| Anisotropic elastic properties | Direction-sensitive strain sensors [48] |