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. 2025 Mar 28;15:10789. doi: 10.1038/s41598-025-94813-5

Table 2.

The band structure properties of MoS2, MoO3, and MoS2@5%MoO3.

Sample Band gap (eV) Semiconductor type Flat band
(V vs. NHE)
Conduction band
(V vs. NHE)
Valance band (V vs. NHE)
MoS2 1.7 P -0.54 -0.54 + 1.16
MoO3 3.3 P -0.12 -0.12 + 3.18
MoS2@5%MoO3 1.8 P -0.55 -0.55 + 1.12