Abstract
Correlated kagome materials exhibit a compelling interplay between lattice geometry, electron correlation, and topology. In particular, the flat bands near the Fermi level provide a fertile playground for novel many-body states. Here we investigate the electronic structure of CsCr3Sb5 using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculations. Our results suggest that Cr 3d electrons are intrinsically incoherent, showing strong electron correlation amplified by Hund’s coupling. Notably, we identify incipient flat bands close to the Fermi level, which are expected to significantly influence the electronic properties of the system. Across the density-wave-like transition at 55 K, we observe a drastic enhancement of the electron scattering rate, which aligns with the semiconducting-like property at high temperatures. These findings establish CsCr3Sb5 as a strongly correlated Hund’s metal with incipient flat bands near the Fermi level, which provides an electronic basis for understanding its novel properties compared to the weakly correlated AV3Sb5.
Subject terms: Superconducting properties and materials, Electronic properties and materials
The authors investigate the electronic structure of kagome CsCr3Sb5 using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculations. The results identify CsCr3Sb5 as a strongly correlated Hund’s metal with incipient flat bands near the Fermi level.
Introduction
Kagome materials with corner-sharing triangular networks in their lattice structures exhibit rich and fascinating properties, such as spin liquid states1–3, topological quantum phases4–8, fractional quantum Hall effect9–11, and many-body emergent phenomena12–15. The characteristic electronic structure of a typical kagome lattice includes the flat band, the Dirac fermions at the K point, and the van Hove singularity (vHS) at the M point (Fig. 1a). If the Fermi level (EF) is tuned to the flat band, novel magnetic states such as fractional quantum Hall effect and quantum anomalous Hall effect may emerge, while the vHS and the Dirac fermions at the EF can induce unconventional superconductivity, charge-density wave (CDW), and/or other novel properties16–18. Up to date, many different kagome materials with characteristic kagome electronic structures have been discovered and extensively studied5,8,18–22. However, the investigation of intrinsic kagome-related many-body ground states remains inadequate since the flat bands are usually situated far from EF, and their impact on the electronic properties of the system requires further exploration.
Fig. 1. Basic properties of CsCr3Sb5.
a Schematic illustration of the characteristic band structure of a kagome lattice including the flat band, the Dirac fermion at the K point, and the van Hove singularity (vHS) at the M point. b The crystal structure of CsCr3Sb5 in which Cr atoms form a planar kagome lattice. c Kagome structure of Cr d orbitals. For simplicity, only the dxz orbital is shown. d In-plane magnetic susceptibility (χ) as a function of temperature measured at H = 5 T. e In-plane resistivity (ρ) as a function of temperature shows a peak near 55 K. f, g Comparison between the calculated band structure of CsCr3Sb5 (f) and CsV3Sb5 (g) by the density functional theory (DFT). The colored lines indicate similar dispersions of the two materials.
Among the abundant kagome materials, AV3Sb5 (A = K, Rb, and Cs) have attracted great attention due to their intriguing emergent properties15,23, such as the interplay/competition between unconventional superconductivity and CDW12–15, time- and/or rotational-symmetry broken phases24–31, giant anomalous Hall effect related to the chirality of the charge order27,32, the observation of pair-density waves33,34, and putative loop current order35–37. In the exploration of AV3Sb5 materials, it has been a common consensus that the vHS near EF plays a key role in the CDW and possibly also in the superconductivity38,39, while the attractive flat band was observed far away from EF40.
Moreover, the non-magnetic and weakly correlated kagome physics of AV3Sb5 can be further enriched by introducing magnetism and strong electron correlations. By replacing vanadium with chromium, the sibling compound CsCr3Sb5 provides an ideal platform to investigate the impact of magnetism and electronic correlation effect in the AV3Sb5-type kagome systems41. Indeed, recent investigations reveal many novel properties of this new kagome material, including superconductivity up to 6.4 K under pressure, frustrated altermagnetism, density-wave-like order, and non-Fermi liquid behavior in the high-temperature state41–43. Compared to the non-magnetic and weakly correlated AV3Sb5, incipient flat bands (IFB, flat bands that extend in a small portion of Brillouin zone and locate away from EF)44 originated from correlated Cr 3d orbitals appear near EF, which may dominate the correlated electronic properties of the system. These novel electronic characteristics, together with the prototypical kagome electronic structure of CsCr3Sb5, require systematic experimental studies of its electronic structure.
In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements, we systematically investigate the electronic structure of CsCr3Sb5 single crystals. Our experiments reveal weakly correlated Sb 5p states and intrinsically incoherent Cr 3d states, in overall agreement with our density functional theory (DFT) and dynamical mean-field theory (DMFT) calculations. Compared to CsV3Sb5, the vHSs and Dirac fermions characterizing the kagome lattice locate far away from EF. Interestingly, we observe a flat Cr 3d band at about 80 meV below EF, confirming the existence of IFB close to EF. Moreover, the electron scattering rate, as manifested by the spectral broadening, is drastically enhanced above the density-wave transition temperature (~ 55 K), which is related to the semiconducting-like behavior of the system at high temperatures. These findings, in good consistency with the theoretical calculations45,46, identify CsCr3Sb5 as a strongly correlated Hund’s metal with IFB. Our work provides a foundation for further exploration of the correlated kagome material with unconventional superconductivity.
Results and discussion
Basic electronic structure of CrCr3Sb5
CsCr3Sb5 crystallizes in a similar layered structure of AV3Sb5 with the space group of P6/mmm (Fig. 1b)41. In each unit cell, the Cr atoms constitute a two-dimensional kagome lattice with Sb atoms occupying the center of the hexagons. It is mainly the Cr 3d orbitals that form the kagome electronic states near EF, as schematically shown in Fig. 1c. Previous X-ray scattering and nuclear magnetic resonance experiments revealed an intertwined CDW and spin-density wave (SDW) below 55 K41. Consistently, our susceptibility measurement suggests an antiferromagnetic transition at 55 K (Fig. 1d), accompanied by a semiconducting-like to metal transition in the resistivity measurement (Fig. 1e), which is a manifestation of the intertwined density-wave-like order in the system. Fig 1f, g compare the DFT-calculated electronic structure of CsCr3Sb5 and CsV3Sb5. In general, the two compounds show similar electronic structures characterizing the kagome lattice. Compared to CsV3Sb5, where the vHSs are close to EF, the vHSs and Dirac fermions in CrCr3Sb5 locate further away from EF, suggesting their relatively irrelevance in the novel transport properties. Prominently, compared to CsV3Sb5, the bandwidth of the dispersive bands near EF is much smaller, and the flat bands located close to EF in CsCr3Sb5 (Fig. 1f), which are believed to play a key role in the unconventional superconductivity44,47,48.
Fig 2a shows the calculated three-dimensional Fermi surface (FS) of CsCr3Sb5. There is a nearly cylindrical electron pocket and two cylindrical hole pockets with similar volumes at k|| = 0 (the point), together with a warped cylindrical electron pocket around k|| = 0.66 Å−1 (the point). At certain kz, there is no Fermi crossing along , leaving holes in the cylindrical hole pockets around (see the yellow Fermi pockets in Fig. 2a). The experimental FS in the kx-kz plane shows a weak but resolvable kz dispersion of the bands around k|| = 0 (the point), confirming the quasi-two-dimensionality of the electronic structure (Fig. 2b, also see the Supplementary Information). The FS in the kx-ky plane shows a hexagonal structure (Fig. 2c). We observe a circular electron pocket around the point, together with a spectral-weight patch around the point. With increasing binding energy, the circular electron pocket around the point shrinks, and a star-of-David-shape pattern can be resolved at − 0.4 eV, as indicated by the black dashed lines in Fig. 2d.
Fig. 2. Overall band structures of CsCr3Sb5.
a Three-dimensional plot of the calculated Fermi surface of CsCr3Sb5. b kz dispersion measured in the photon energy range between 60 eV and 110 eV. c, d The kx-ky map of ARPES intensity at the Fermi level (EF) and − 0.4 eV. e–g Band dispersion along measured using different photon polarizations in a large energy range. The black arrow in (g) indicates the band that contributing to the star-of-David structure in (d). h Comparison between the calculated density-of-states (DOS) and integrated energy distribution curve (EDC). In panels (c, d, and g), the data measured with linear-horizontally (LH) and linear-vertically (LV) polarized photons were merged for completeness of the electronic structure. Data in (c–g) were measured using 93 eV photons. All data were collected at 6 K.
Fig 2e–g shows the experimental band dispersions along high symmetry directions in a large energy range. Since the electronic states near EF are mainly contributed by Cr 3d orbitals, the data strongly depend on the light polarization. In general, the spectra can be roughly divided into three segments in energy: the dispersive bands near EF, an M-shape feature around − 1.5 eV, and weakly dispersive bands around − 3 eV. These features contribute peaks in the integrated energy distribution curve (EDC) that is in overall consistency with the calculated density-of-states (DOS), as compared in Fig. 2h.
Incipient Flat bands near EF
Figure 3 shows the fine electronic structure along high-symmetry directions near EF. The experiment shows an overall agreement with the calculation (Fig. 3a, b), as shown by the data overlaid with the renormalized calculation in the Supplementary Information. The energy bands originated from Sb p orbitals (Supplementary Information) are well captured by the calculation. Specifically, they form the vHS at the Γ point, which shows electron-like dispersion in the kx-ky plane and hole-like dispersion along kz, as schematically shown in Fig. 3c. We notice that the electron band around has mixed p and d orbital components, suggesting a p-d interaction (Supplementary Information). For the Cr 3d orbital bands, the spectra are generally much broader. It is noteworthy that while non-trivial surface states related to the Z2 topological electronic structure were observed in AV3Sb540, here we do not find clear evidence for the surface states.
Fig. 3. Comparison between experimental and calculated fine electronic structure of CsCr3Sb5 near EF.
a Density functional theory (DFT) calculation of the orbital-projected electronic structure of CsCr3Sb5 along high-symmetry directions. b ARPES spectra along high-symmetry directions. c Schematic illustration of the vHS at Γ (blue circle in a) with hole-like and electron-like dispersion along kz and kx/y, respectively. d Zoom-in plot of band dispersions along ΑΗ (left) and the corresponding EDC at Α (right). e DFT + dynamical mean-field theory (DMFT) calculation of the electronic structure, with on-site Coulomb interaction U = 5 eV and Hund’s coupling JH = 0.88 eV. The red arrows indicate the flat band close to EF (Supplementary Information). The calculated result with U = 5 eV and JH = 0.5 eV is shown in the Supplementary Information. Data were collected at 6 K. For completeness, data measured with LH- and LV-polarized photons were merged.
Prominently, we reveal a flat band close to EF, as indicated by the red arrows in Fig. 3b. The flat band with a band bottom at about 80 meV below EF can be better resolved from the data along and the EDC at shown in Fig. 3d (also see the Supplementary Information). This flat band close to EF may play an important role in the transport properties of CsCr3Sb5 and contribute to the electronic specific-heat coefficient 105 mJ/(K·mol), much larger than CsV3Sb541. The observation of the flat band in the ARPES experiment suggests that the DFT-calculated flat bands are pushed closer to EF. To understand this difference, we perform DFT + DMFT calculation, which can better capture the strong electron correlations of Cr 3d electrons. The calculated spectral function at Coulomb interaction U = 5 eV and Hund’s coupling JH = 0.88 eV45 is shown in Fig. 3e. Interestingly, the flat bands above EF in Fig. 3a are indeed pushed closer to EF and strongly renormalized, leaving the incipient flat band with prominent spectral weight mainly around the point. It is likely that the EF of CsCr3Sb5 crystals are slightly raised up by self-doping or surface effects and the flat bands, similar to the situation in CsV3Sb549. Therefore, the flat band can be experimentally observed by the ARPES experiment.
Moreover, the DFT + DMFT calculation suggests that the electron correlation effect shows a minor impact on the Sb p orbital bands but strongly broadens Cr d orbital bands, well capturing the intrinsic characteristics of our ARPES spectra. We emphasize that the strong Hund’s coupling is essential in understanding the strong renormalization of the effective mass and the enhanced electron self-energy45. As shown in the Supplementary Information, the calculation with different Hund’s coupling suggests that the strong broadening of the Cr 3d orbitals are intrinsically due to the Hund’s coupling. The agreement between our experiment and DMFT calculation thus confirms that CsCr3Sb5 is a strongly correlated Hund’s metal with incipient flat bands.
Enhanced scattering rate across the density-wave-like transition
Although CsCr3Sb5 shows a density-wave-like transition near 55 K41, as confirmed by our susceptibility and resistivity measurements, we did not observe clear signatures of band folding, splitting, or shift related to the transition with synchrotron-based ARPES (Fig. 4a and b). To better resolve the dispersion around the point and track the temperature evolution of the band structure, we conducted laser-ARPES measurements with improved energy and momentum resolutions. The Sb p orbital band around exhibits strong intensity with a slight change of the dispersion slope as approaching EF, possibly due to the interaction with Cr 3d orbitals (Fig. 4c and the data after dividing the Fermi-Dirac distribution function in the Supplementary Information). Fig 4d shows the temperature evolution of our laser-ARPES spectra. Again, no clear change of the spectra, such as gap opening is observed across the density-wave transition at 55 K, as can be seen from the corresponding EDCs near EF in Fig. 4e.
Fig. 4. Temperature evolution of the electronic structure.
a, b ARPES spectra measured at 6 K (a) and 75 K (b) with 52 eV photons. c Laser-ARPES spectra measured at 40 K showing the electron band around the point. d Laser-ARPES spectra measured at different temperatures. The black line is the extracted band dispersion by fitting the momentum-distribution curves (MDCs) to Lorentzians. e EDCs at the Fermi momentum at different temperatures. f the MDCs at EF at different temperatures with the fitting results overlaid. The corresponding temperatures are indicated in (e) (dots). g Temperature dependence of the full-width-at-half-maximum (FWHM) of the MDCs at EF. Error bars represent the confidence intervals of the fitting under 95% confidence level. Data in (c–g) were collected using a 7 eV laser.
The metallic band structure, however, deviates from the observed semiconducting-like resistivity above 55 K. We notice that the spectra are suddenly broadened across the density-wave transition as shown by the MDCs near EF (Fig. 4f). By fitting the MDCs of the Sb p orbital band at EF to Lorentzians (black lines in Fig. 4f), we extract the full-width-at-half-maximum (FWHM) of the MDCs and plot the results as a function of temperature in Fig. 4g. Apparently, with increasing temperature, the FWHM quickly rises above about 50 K, suggesting an enhanced electron scattering rate at high temperatures, which is likely due to the enhanced fluctuation effect and may explain the semiconducting-like behavior of CsCr3Sb5 above 55 K. Further experimental and theoretical exploration are required to unravel the connection between the electronic structure and density-wave transition in this material.
Discussion
The replacement of vanadium by chromium greatly changes the electronic structure of AV3Sb5, making CsCr3Sb5 an ideal kagome material to explore correlated physics such as unconventional superconductivity and magnetism. On the one hand, the extra valance electrons in chromium raise the EF of CsCr3Sb5 close to the flat bands compared to CsV3Sb5, leaving IFBs near EF. On the other hand, the Coulomb interaction between Cr 3d electrons induces strong electron correlation, which is further enhanced by the Hund’s coupling. Therefore, the scattering rate or the imaginary part of electron self-energy is greatly enhanced, making the electronic states intrinsically incoherent, as manifested by the broad ARPES spectra of Cr 3d electrons. We emphasize that only the Hubbard U cannot induce the experimentally observed large effective mass41 and scattering rate (see Figs. 3b, e, and the Supplementary Information), while the correlation effects are sensitive to the Hund’s coupling45, verifying CsCr3Sb5 as a strongly correlated Hund’s metal.
The IFB and the strong electron correlation of CsCr3Sb5 provide an electronic basis for understanding its novel properties, such as large effective mass, magnetism, and unconventional superconductivity. Firstly, the cooperation of Hund’s coupling and the IFBs significantly enhances the orbital-dependent electron correlation effect45,46, similar to the physics in iron-based superconductors50–52. Moreover, the IFB can boost the Kondo-like effect, such as heavy fermion in Hund’s metal, according to the previous theoretical calculation. It is, therefore, possible to tune the correlated physics of CsCr3Sb5 by controlling the portion and width of the IFBs45. Secondly, Hund’s coupling induces the localization of the magnetic moments and intrinsically incoherent Cr 3d states. In the paramagnetic state, the fluctuation of local spin moments further enhances the scattering rate of electrons, as observed in our temperature-dependent measurements, which is related to the weak semiconducting-like transport property at high temperatures. With decreasing temperature, the system is expected to undergo an incoherence-to-coherence crossover by screening the local moments45, and the relatively coherent flat bands can be observed near EF, which is also consistent with our observation of the reduced scattering rate with decreasing temperature. Finally, the incipient flat band is believed to be crucial for unconventional superconductivity44,47,48. It has been shown that the application of pressure can effectively tune the portions and width of the incipient flat bands45, which may be important for the pressurized superconductivity in CsCr3Sb541. It is noteworthy that similar physics, including the flat bands near EF, the correlation enhanced by Hund’s coupling, and the competition between density-wave and pressurized superconductivity, has been revealed in the nickelates Lan+1NinO3n+153–56.
In summary, we systematically investigate the electronic structure of the correlated kagome material CsCr3Sb5. Our work reveals the characteristic electronic structure including the vHS and flat bands. The electronic scattering is drastically enhanced across the density-wave transition, providing an understanding of the semiconducting-like transport at high temperatures. Consistent with the DFT + DMFT calculations, our experimental results identify that CsCr3Sb5 is a strongly correlated Hund’s metal with IFBs. Our work provides crucial information for understanding the novel properties of CsCr3Sb5 in comparison to the weakly-correlated and non-magnetic AV3Sb5 compounds.
Note: during the review process of the manuscript, we notice that several independent papers have investigated the electronic structures of CsCr3Sb5 and Cs(V1-xCrx)3Sb5 with consistent results57–59.
METHODS
Sample growth and characterization
Single crystals of CsCr3Sb5 were grown via a self-flux method. The details of the crystal growth can be seen in ref. 41. Hexagonal-shaped crystalline flakes with a typical size of 0.5 × 0.5 × 0.02 mm3 were harvested for the ARPES measurement. Before the ARPES experiment, crystals from the same batch were characterized by X-ray diffraction, energy-dispersive X-ray spectroscopy, and measurements of electrical resistivity and magnetic susceptibility. The resistivity measurement was conducted using a standard four-terminal method. The magnetic measurements were performed on a Magnetic Property Measurement System (MPMS-3, Quantum Design).
ARPES measurements
Synchrotron-based ARPES measurements were conducted at beamline 5-2 in Stanford synchrotron lightsource (SSRL, proposal No. S-XV-ST-6370A). The samples were cleaved in-situ under ultra-high vacuum below 1 × 10-10 mbar. Data were collected with a Scienta DA30L electron analyzer. The total energy and angular resolutions were set to 15 meV and 0.2°, respectively. ARPES experiments were also repeated at beamline 03U and Dreamline in Shanghai Synchrotron Radiation Facility (SSRF).
Laser-ARPES measurements were conducted at Tsinghua University. The 7-eV laser was generated by frequency doubling in a KBBF crystal and focused on the sample by an optical lens with a beam spot of about 20 μm. CsCr3Sb5 single crystals were cleaved in-situ under ultra-high vacuum below 5 × 10-11 mbar. Data were collected by a Scienta DA30L electron analyzer. The total energy and angular resolutions were set to 3 meV and 0.2°, respectively.
DFT calculations
First-principles band structure calculations were performed using Vienna ab initio simulation package (VASP)60 with a plane wave basis. The exchange-correlation energy was considered under Perdew-Burke-Ernzerhof (PBE) type generalized gradient approximation (GGA)61 with spin-orbit coupling included. The cutoff energy for the plane-wave basis was set to 500 eV. A Γ-centered k-point mesh of 12 × 12 × 8 was adopted in the self-consistent calculations.
DFT + DMFT calculations
The single-site DFT + DMFT calculations are performed with full charge self-consistency using the DFT+eDMFT code62,63 based on the WIEN2K package64. We choose a large hybridization energy window from -10 to 10 eV, including all the five correlated Cr 3d orbitals and other non-correlated orbitals such as Sb p orbitals, to capture the strong hybridization effect between the Sb p and Cr 3d orbitals. Rotationally-invariant local Coulomb interaction Hamiltonian is used, which is parameterized by on-site Hubbard U and Hund’s coupling JH. We choose the “exact” double-counting scheme65. The continuous-time quantum Monte Carlo (CTQMC)66 is used as an impurity solver. The temperature for CTQMC is 100 K. The self-energy on real frequency is obtained by the analytical continuation method of maximum entropy.
Supplementary information
Acknowledgements
We thank D.W. Shen, Z.T. Liu, and Y.B. Huang for the access to the beamline 03U and the Dreamline at SSRF. This work is funded by the National Key R&D Program of China (Grant No. 2022YFA1403200, 2022YFA1403100, 2023YFA1406101, and 2022YFA1604400/03) and the National Natural Science Foundation of China (No. 92365204, No. 12274251, and No. 12274298). L.X.Y. acknowledges the Fund of Science and Technology on Surface Physics and Chemistry Laboratory (No. XKFZ202102). Y.L.W. was supported by the National Natural Science Foundation of China (No. 12174365), the New Cornerstone Science Foundation, and the Innovation Program for Quantum Science and Technology (No. 2021ZD0302800). Use of the Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-76SF00515.
Author contributions
L.X.Y. and G.H.C. conceived the experiments. Y.D.L. carried out ARPES measurements with the assistance of X.D., W.X.Z., K.Y.Z., Y.Q.H., S.Y.Z., H.K.C., J.Y.L., C.P., Y.H.Y., D.H.L., M.H., Z.K.L., and Y.L.C. Ab-initio calculations were performed by X.D. and S.Q.W. DFT + DMFT calculations were performed by Y.L.W. Single crystals were synthesized and characterized by Y.L. and G.H.C. The paper was written by Y.D.L. and L.X.Y. All authors contributed to the scientific planning and discussion.
Peer review
Peer review information
Nature Communications thanks the anonymous reviewers for their contribution to the peer review of this work. A peer review file is available.
Data availability
The data sets that support the findings of this study are available from the corresponding author upon request.
Competing interests
The authors declare that they have no competing interests.
Footnotes
Publisher’s note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
These authors contributed equally: Yidian Li, Yi Liu, Xian Du.
Contributor Information
Yilin Wang, Email: yilinwang@ustc.edu.cn.
Yulin Chen, Email: yulin.chen@physics.ox.ac.uk.
Guanghan Cao, Email: ghcao@zju.edu.cn.
Lexian Yang, Email: lxyang@tsinghua.edu.cn.
Supplementary information
The online version contains supplementary material available at 10.1038/s41467-025-58487-x.
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Associated Data
This section collects any data citations, data availability statements, or supplementary materials included in this article.
Supplementary Materials
Data Availability Statement
The data sets that support the findings of this study are available from the corresponding author upon request.




