Table 2.
Manual count of AuNp per size class derived from TEM analysis of the samples
| Sample name | Lamella width [µm] | AuNp count per size class, normalized to lamella width [1/µm] | AuNp—SiNc distance [nm] | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| < 10 nm | 10 nm | 20 nm | 30 nm | 40 nm | 50 nm | 60 nm | 70 nm | 80 nm | 90 nm | 100 nm | 110 nm | 120 nm | |||
| A0_N3 | 3.58 | 44 | 1.7 | 10.3 | 6.7 | 0.28 | 0 | 0.28 | 0.84 | 0.84 | 0.56 | 0.28 | 0 | 0.28 | 20 to 40 |
| A2_N1 | 5.13 | 43 | 0 | 0 | 0.58 | 0.2 | 0.2 | 0.2 | 0.39 | 0.39 | 0.58 | 0 | 0.58 | 0 | 30 to 50 |
| A3_N0 | 0.9 | 118 | 7.8 | 3.3 | 1.1 | 0 | 2.2 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 100 |
Counts are normalized to the lamella width. The distance between AuNp larger than 10 nm and SiNc containing SiOx layer is shown. Similar TEM images as in Figure SM1 (in supplementary material) were used to provide this data (images not shown). Please note that this data is intended as an approximation and should be used for general orientation only