Table 2. Summary of the EL data for the (P/M)-Spiro-3TCzBN-based devices with a sensitizer.

Device	λ em a [nm]	FWHMb [nm/eV]	V on c [V]	L max d [cd m−2]	CEmaxe [cd A−1]	PEmaxf [lm W−1]	EQEg [%]	g EL h [10−4]	CIEi (x, y)
(M)-Spiro-3TCzBN	560	53/0.18	2.7	134 054	128.3	135.8	34.9/34.8/33.5	+4.26	(0.443, 0.546)
(P)-Spiro-3TCzBN	560	53/0.18	2.7	139 700	127.1	134.5	34.6/34.3/32.5	−3.51	(0.442, 0.546)

^aEL peak wavelength at 100 cd m⁻².

^bFull width at half maximum of the spectra given in wavelength and energy.

^cTurn-on voltage at 1 cd m⁻².

^dMaximum luminance.

^eMaximum current efficiency.

^fMaximum power efficiency.

^gMaximum external quantum efficiency, and values at 100 and 1000 cd m⁻², respectively.

^hElectroluminescence asymmetry factor.

ⁱValue taken at 100 cd m⁻².