3. Summary of Different Post-synthesis Modifications in Ag-Based Semiconductors .

material	synthetic method	postsynthesis modification	parameters	defect analysis	application	ref
α-Ag2WO4	coprecipitation	EBI	200 kV	XPS
α-Ag2WO4	microwave hydrothermal	EBI	30 kV/30 min		antimicrobial
α-Ag2WO4	coprecipitation	EBI	20 kV/20 min
β-Ag2MoO4	coprecipitation	EBI	5 kV/5 min
β-Ag2MoO4	coprecipitation	EBI	5–20 kV/5 min	PL
β-Ag2MoO4	coprecipitation	EBI	30 kV/6 min
α-Ag2WO4	coprecipitation	EBI	15 kV/5 min		antimicrobial and antitumor
		femtosecond laser irradiation	800 nm/30 fs/1 kHz/200 mW
α-Ag2WO4	microwave hydrothermal	EBI	30 kV/2 min	PL and XPS
		femtosecond laser irradiation	800 nm/30 fs/1 kHz/200 mW
α-Ag2WO4	coprecipitation	EBI	15 kV/5 min	PL, XPS and Magnetic analyses
		femtosecond laser irradiation	780 nm/150 fs/1 kHz/200 mW
α-Ag2WO4	coprecipitation	EBI	30 kV/30 min		antimicrobial
		femtosecond laser irradiation	800 nm/30 fs/1 kHz/200 mW
α-Ag2WO4	coprecipitation	femtosecond laser irradiation	800 nm/30 fs/1 kHz/200 mW		antimicrobial
α-Ag2WO4	commercial	laser irradiation	532 nm/10 ns/50 kHz/150 mJ	PL and XPS	photocatalysis of MO

^aMO = methyl orange.