Figure 1.

InAsSb single crystal grown under microgravity conditions. (A) Schematic of InAsSb space growth; a nominal temperature of 800°C is calibrated to be 720°C near the InAs-seed/InSb interface at the onset of growth. (B) Photograph of the μg crystal and schematic of ingot dissection. (C) EPMA characterizations; from top to bottom: backscattered electron image, and elemental mapping of As and Sb. (D) EPMA line scans along the radial (red) and axial (blue) directions. (E) Linear scan of Raman spectra along the axial direction. (F) TEM-EDS mapping. (G) High-resolution TEM image.