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. 2025 May 2;125(12):5584–5625. doi: 10.1021/acs.chemrev.4c00845

1. Summary of RRAM Integrated Demonstrators ,− .

Year Node [nm] Capacity Institution Stack Ref
2011 180 4 Mb ITRI TiN/Ti/HfO2/TiN
2011 130 384 kb Adesto Ag/GeS2
2011 180 4 Mb Sony CuTe/GdO x
2012 180 8 Mb Panasonic TaN/TaO2/Ta2O5/Ir
2013 180 500 kb Panasonic TaN/TaO2/Ta2O5/Ir
2013 24 32 Gb Sandisk/Toshiba Metal Oxide
2014 28 1 Mb TSMC Metal Oxide
2014 27 16 Gb Micron/Sony Cu-based/oxide
2015 90 2 Mb Renesas Metal/Ta2O5/Ru
2017 90 500 kb Winbond TiN/HfO2/Ti/TiN
2018 40 11.3 Mb TSMC  
2019 22 3.6 Mb Intel  
2020 22 13.5 Mb TSMC  
2020 28 500 kb TSMC  
2020 28 1.5 Mb TSMC/IMECAS  
2021 14 1 Mb IMECAS Cu-based/oxide
2022 28 800 kb Infineon/TSMC  
2023 12 1 Mb TSMC