Table 2. Utilized data sources for the device structure simulation.

Parameters (units)	FTO64	IGZO65	SnS2 (ref. 66)	CdS67	ZnS68	Cs2SnCl6	Cs2SnBr6	Cs2SnI6
Thickness (nm)	50	50	50	50	50	1000	1000	1000
Bandgap (eV)	3.6	3.050	2.24	2.40	2.80	1.652	1.358	0.228
Electron affinity (eV)	4	4.160	4.24	4.20	3.80	3.620	4.250	4.642
Dielectric permittivity	9	10	10	10	9	4.520	3.660	5.750
CB effective DOS (cm−3)	2.2 × 1018	5 × 1018	2.2 × 1018	2.8 × 1019	2.2 × 1018	1.89 × 1017	1.890 × 1017	1.848 × 1017
VB effective DOS (cm−3)	1.8 × 1019	5 × 1018	1.8 × 1019	2.8 × 1019	1.8 × 1019	1.629 × 1018	1.392 × 1018	1.258 × 1018
Electron mobility (cm2 V−1 s−1)	100	15	50	100	100	25	25	30
Hole mobility (cm2 V−1 s−1)	25	10	50	25	25	20	25	30
Donor density, ND (cm−3)	5 × 1018	1 × 1018	1 × 1017	1 × 1018	1 × 1017	0	0	0
Acceptor density, NA (cm−3)	0	0	0	0	0	1 × 1017	1 × 1017	1 × 1017
Bulk defect density, Nt (cm−3)	1014	1 × 1015	1 × 1014	1014	1014	1012	1012	1012