Table 4.
Power conversion efficiency (PCE) of 2D materials-based OSCs with their functional roles for improved band alignment and interfacial layer
Device structure | Functionality | PCE (%) | References |
---|---|---|---|
Al/P3HT:PC61BM/MoO3-MoS2/FTO/Glass | Serve as HTL, after UVO treatment forms MoO3-MoS2 double layer which enhances hole extraction, blocks electrons and improved energy-level alignment | 4.15 | [192] |
Al/P3HT:PC61BM(GQD)/MoS2/TFSA-GR | MoS2 layers improve charge extraction efficiency and interfacial resistance; TFSA-doped graphene acts as transparent conductive electrode and improves conductivity and energy-level alignment. GQD incorporation into active layer enhances light absorption, charge separation and improves flexibility and mechanical stability of device | 4.23 | [193] |
Ag/p-MoS2/PBDTTT-C-T:PC70BM/n-MoS2/AgNW | Used as interfacial layers and composite transparent electrodes in AgNW which improves device fill factor and light absorption and enhances electrode conductivity and transmittance. Enables high-efficiency, large area and semi-transparency | 6.39 | [194] |
Ag/MoO3/PTB7:PC71BM/PEIE/ITO/Glass | 2D material work as ETL and sub-photosensitizer, which enhances charge separation and electron transfer. Improve light absorption, reduce electron decay time and enhance charge carrier dynamics | 7.15 | [195] |
Al/PFN/ PTB7:PC71BM/MoS2@Au/ITO | Acts as HTL utilizing plasmonic effects from Au nanoparticles for increased light absorption and charge carrier generation to improve short-circuit current density | 7.25 | [196] |
PFN/PTB7:PC71BM/PEDOT:PSS/MoS2 | Serves as HTL, MoS2 modified with a surfactant to improve colloidal stability and solution processability for long-term storage and easy integration | 7.26 | [197] |
GO/PTB7:PC71BM/LiF | Used as electron-blocking layer to replace PEDOT:PSS for enhancing thermal and humidity resistance and templating of active layer morphology, π stacked face-on microstructure | 7.46 | [198] |
PTB7:PC71BM/e-MoO3 | Serve as HTL, improves the hole transport and offers low-cost, scalable and efficient alternative to conventional vacuum-deposited MoOx layers | 7.54 | [199] |
Ag/MoO3/PBDTTT-C-T:PC70BM/ZnO/ITO | MoS2 nanosheets serve as interfacial layers and improve the charge transport, higher conductivity and transparency | 7.62 | [194] |
Ag/MoO3/PTB7-Th:PC71BM/PEIE/ITO/Glass | Serves as ETL and auxiliary light harvester, facilitate efficient charge separation and accelerating electron mobility and improves optical absorption and shortens carrier lifetime | 7.86 | [195] |
ITO/ZnO/PTB7:PC71BM/MoS2/Ag | Used as HTL, enhances the hole transport and energy-level alignment for room temperature, low-cost and scalable processing and alternative to vacuum-deposited MoOx for large-area | 8.10 | [199] |
PTB7:PC71BM/NbSe2 | Acts as low trap density HTL, enhances the hole extraction and interfacial quality and effectively replaces MoO3 in OSCs | 8.10 | [200] |
Ag/MoO3/PTB7:PC71BM:MoS2 NS/ZnO/ITO | Serve as dual-function additive in the ternary blend, enhance light harvesting by increasing optical absorption and improve charge transport by increasing carrier mobility and reduce trap state density | 8.17 | [201] |
ZnO/BP/PTB7:PC71BM/MoO3 | Used as ETL by forming cascaded band structure which facilitates electron transport, improve charge carrier extraction and reduce recombination | 8.18 | [35] |
ITO/F-rGO/PTB7-Th:PC71BM/PFN/Al | Function as HTL, improve film formation and conductivity. Enhances the energy-level alignment due to higher work function fluorinated-reduced graphene oxide | 8.60 | [202] |
CuSCN/AMQS/PTB7-PC71BM | Function as a passivating interlayer in bilayer hole extraction layer with CuSCN with reducing surface defects, suppress recombination and exciton quenching for enhanced charge extraction | 8.80 | [203] |
ITO/MXene/PBDB-T:ITIC | Function as both HTL and ETL by modifying work function via surface treatment which enable selective contact formation and facilitates efficient tunable charge extraction | 9.06 | [204] |
ITO/MoC:PEDOT:PSS/PTB-Th:PCBM/LiF | Serve as HTL and forms composite layer with PEDOT:PSS and enhances hole mobility, charge extraction and active layer morphology improved the device efficiency | 9.24 | [205] |
ZnO/PTB7-Th:WSe2NFs:PC71BM/MoO3 | Reduce exciton recombination, enhance charge transport, help in maintaining neat bulk heterojunction morphology and improve donor–acceptor interfaces and promote more balanced bipolar charge carrier mobility | 9.24 | [206] |
ITO/PFN/PTB7:WSe2:PC71BM/MoO3/Ag | Function as third component within the active layer, promotes exciton generation and facilitates exciton dissociation at the WSe2-fullerene interface. Improve electron extraction and balance charge transport | 9.30 | [207] |
RGO/ZnO:ITRGO/PTB7-Th:PC71BM/MoO3 | Incorporation into hybrid ZnO-based cathode interlayers improve electrical conductivity, form interconnected nanostructures and aligns energy levels for enhanced charge extraction | 9.49 | [208] |
MXene/PBDB-T:ITIC/PFN:Br | Function as HTL, improve the work function for efficient hole extraction and enhances electrical conductivity and optical transparency | 10.53 | [209] |
α-In2Se3/PBDB-T:ITIC:PDINO | Incorporation with PEDOT:PSS forms a composite HTL, enhances conductivity by screening Coulombic interactions and improving PEDOT chain networking, offers suitable work function and enhanced optical transmittance | 11.22 | [210] |
ZnO/PTB7-Th:IEICO-4F:BPNFs/MoO3 | Function as morphology modifiers and enhances π-π stacking order and domain purity, reduce carrier resistance, suppress recombination and offers morphological stability by retarding phase mixing during device aging for stability | 12.20 | [211] |
ZnO/PBDB-T:ITIC:Bi2OS2/MoO3 | Function as heterogeneous nucleation in active layer, improve crystallization, charge transport and surface morphology for enhanced efficiency | 12.31 | [212] |
PEDOT:PSS/Ti3C2TX/PM6:Y6/PFN:Br | Incorporation into PEDOT:PSS to form composite HTL for enhanced electrical conductivity and facilitates conformational changes in PEDOT, creates better charge transfer pathways | 14.55 | [213] |
ZnO/PDINO-G/PM:Y/MoO3 | Function as cathode interfacial material, for improved conductivity, lowers work function, reduce carriers recombination and enhances charge extraction | 15.70 | [214] |
WS2/PBDB-T-2 F:Y/PFN:Br | Serve as HTL, WS2 enhances work function alignment, improves film uniformity, higher short-circuit current, reduced series resistance for enhanced performance | 15.80 | [215] |