Fig. 3. Current-induced switching and the effect of IP field and temperature.

(A) Schematics of the film stack and the device geometry. The current is injected along $\widehat{\mathbf{x}}$ , and transverse voltage is measured along $\widehat{\mathbf{y}}$ . (B) Magnetization switching behavior as a function of the injected current density at 340 K with an IP field along $\widehat{\mathbf{x}}$ , μ₀H_x, of 0.16 T (blue), 0 T (green), and −0.16 T (red) in magnitude. In all three cases, deterministic full switching is observed above a critical current density. (C) Dependence of switching current density on H_x. The switching current density corresponding to 25% (75%) switching is plotted in open (solid) circles. Data for the positive field are plotted in blue, the negative field in red, and the zero field in green. Black dashed (solid) lines are linear fits to the 25% (75%) switching current densities as a function of H_x. (D) Magnetization switching using a train of 10-ms-long current pulses, ±1.6 × 10¹¹ A/m² in magnitude, under a zero field measured at T_Env = 340 K. The change in transverse resistance, ∆R_H, normalized by the difference in R_H between the up and down magnetization states determined from the OOP field sweep, 2R_AHE, reflects the ratio between the switched area and the entire device area. (E) Switching ratio ∆R_H/2R_AHE plotted as a function of the environmental temperature T_Env. (F) Dependence of j_thres (onset of switching) on the device temperature T_Device at j_thres extrapolated from Joule heating calibration (see Materials and Methods). The region shaded in red represents conditions that will give rise to field-free switching.