Fig. 5. Comparison between 5- and 14-nm EuIG films.

(A) Magnetization switching behavior as a function of the injected current density for 5-nm (top) and 14-nm (bottom) EuIG films measured at an environmental temperature, T_Env = 340 K. (B) Threshold current density j_thres plotted as a function of T_Env for both film thicknesses. (C) Color map of 10 repeats of the normalized change in transverse resistance (∆R/R_AHE) measured as a function of injected current density ( j) at T_Env = 333 K for the 14-nm film. The magnetization is initialized to high (low)–resistance state for negative (positive) inject current. (D) Data points represent the average of the repeats in the color map in (C). Red curves are error function fits to extract the threshold current density from the center of the fitted error function and the error bars from the width of the fitted error function. (E) and (F) are similar to (C) and (D) but measured at T_Env = 353 K for the 14-nm film.