Skip to main content
. 2025 Aug 8;16(33):8410–8417. doi: 10.1021/acs.jpclett.5c01405

2.

2

(a) j–V curves of ITO-PSCs with different mp-TiO2 thicknesses at 1 sun illumination. (b) Normalized Bode plot of the devices at the open circuit condition. (c) Nyquist plots of the devices, presented at voltages where the features of the impedance spectra are clearly distinguishable: 800 and 950 nm devices at 0.5 V and 500 and 1200 nm devices at V = V oc. Frequency values corresponding to key features are highlighted. The IS measurements were taken at 0.1 sun illumination. The fittings were performed using the equivalent circuit described in Figure f, with the following parameters. (i) mp-TiO2 500 nm: R s ≈ 30 Ω, R rec ≈ 540 Ω, R tr ≈ 290 Ω, C MF ≈ 10–6 F, C g ≈ 10–10 F, R ion ≈ 390 Ω, and C ion ≈ 8 × 10–6. (ii) mp-TiO2 800 nm: R s ≈ 30 Ω, R rec ≈ 500 Ω, R tr ≈ 1280 Ω, C MF ≈ 6 × 10–7 F, C g ≈ 10–9 F, R ion ≈ 225 Ω, and C ion ≈ 5 × 10–5. (iii) mp-TiO2 950 nm: R s ≈ 30 Ω, R rec ≈ 2801 Ω, R tr1 ≈ 890 Ω, R tr2 ≈ 440 Ω, C MF ≈ 5 × 10–5 F, C g ≈ 10–7 F, R ion ≈ 1850 Ω, and C ion ≈ 8 × 10–4. (iv) mp-TiO2 1200 nm: R s ≈ 70 Ω, R rec ≈ 10–6 Ω, R tr ≈ 350 Ω, C MF ≈ 10–7 F, C g ≈ 10–7 F, R ion ≈ 600 Ω, and C ion ≈ 6 × 10–6.