Table 1. The input settings for FTO, ETLs, HTL, as well as an absorber layer.

Parameter	FTO77	WS2 (ref. 59)	WO3 (ref. 78)	ZnO59	PCBM59	CBTS59	Rb2NaInI6
Thickness (nm)	500	100	50	50	50	100	1000
Bandgap (Eg) (eV)	3.5	1.8	2	3.3	2	1.9	1.702
Electron affinity (χ) (eV)	4	3.95	3.8	4	3.9	3.6	3.779
Dielectric permittivity (εr)	9	13.6	4.8	9	3.9	5.4	5.06
Effective DOS (conduction) (cm−3)	2.2 × 1018	1.0 × 1018	2.2 × 1021	3.7 × 1018	2.5 × 1021	2.2 × 1018	3.053 × 1016
Effective DOS (valence) (cm−3)	1.8 × 1019	2.4 × 1019	2.2 × 1021	1.8 × 1019	2.5 × 1021	1.8 × 1019	9.945 × 1017
Electron thermal velocity (cm s−1)	1.0 × 107	1.0 × 107	1.0 × 107	1.0 × 107	1.0 × 107	1.0 × 107	1.0 × 107
Hole thermal velocity (cm s−1)	1.0 × 107	1.0 × 107	1.0 × 107	1.0 × 107	1.0 × 107	1.0 × 107	1.0 × 107
Electron mobility (cm2 V−1 s−1)	20	100	30	100	0.2	30	155.6
Hole mobility (cm2 V−1 s−1)	10	100	30	25	0.2	10	15.25
Donor density (ND) (cm−3)	1 × 1018	1 × 1018	6.35 × 1017	1 × 1018	0	0	0
Acceptor density (NA) (cm−3)	0	0	0	0	2.93 × 1017	1 × 1018	1 × 1015
Defect density (Nt) (cm−3)	1 × 1015	1 × 1015	1 × 1015	1 × 1015	1 × 1015	1 × 1015	1 × 1015