Fig. 16. The electron energy loss spectrum of point doping in a monolayer of SiC: (a) AsSi, (b) BiSi, (c) GaSi, (d) GeSi, (e) InSi, (f) PSi, (g) PbSi, (h) SbSi, (i) SnSi, (j) TeSi, (k) CaSi, (l) KSi, (m) MgSi, (n) NC, (o) BC.
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