Table 1. Summary of electrical and optical properties of the layer, and device properties for various device configurations.
| Device configuration | Electrical characteristics of layer | Optical property of layer | Device properties | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| Effective mass | Band gap (eV) | Direct/indirect band gap | Mobility (cm2 V−1 s−1) | Real part of permittivity | Imaginary part of permittivity | λ mid (nm) | Peak power spectral density (W cm−1 eV−1) | LEE (%) | |||
|
|
μ n | μ p | ||||||||
| Pristine | 2.54 | 1.78 | 2.57 | Direct | 277 | 198 | 7.65(λb) | 3.57(λb) | 476 | 4.87 | 10.27 |
| 5.46(λg) | 0.33(λg) | ||||||||||
| 5.29(λr) | 0.13(λr) | ||||||||||
| VC | — | — | 1.13 | Indirect | — | — | — | — | — | — | — |
| VSi | — | — | 2.21 | Indirect | — | — | — | — | — | — | — |
| V2C | — | — | 0.95 | Indirect | — | — | — | — | — | — | — |
| V2Si | — | — | 0.64 | Indirect | — | — | — | — | — | — | — |
| VSiC | — | — | 0.95 | Indirect | — | — | — | — | — | — | — |
| CSi | 2.44 | 1.66 | 1.99 | Direct | 288 | 212 | — | — | 612 | 3.59 | — |
| SiC | — | 2.00 | Indirect | — | — | — | — | — | — | — | |
| Si ↔ C | 2.13 | 2.87 | 1.41 | Direct | 330 | 122 | — | — | 855 | 2.28 | — |
| AsSi | 3.84 | 1.73 | 1.96 | Direct | 183 | 203 | 4.94(λb) | 6.42(λb) | 619 | 3.59 | 21.53 |
| 7.01(λg) | 2.62(λg) | ||||||||||
| 6.59(λr) | 1.32(λr) | ||||||||||
| BiSi | — | — | 2.00 | Indirect | — | — | — | — | — | — | — |
| GaSi | 3.14 | 2.0 | 2.50 | Direct | 224 | 176 | 4.92(λb) | 2.78(λb) | 490 | 4.74 | 17.55 |
| 3.44(λg) | 0.46(λg) | ||||||||||
| 1.45(λr) | 0.42(λr) | ||||||||||
| GeSi | — | — | 2.51 | Indirect | — | — | — | — | — | — | — |
| InSi | 2.38 | 2.14 | 2.45 | Direct | 296 | 165 | — | — | 500 | 4.57 | 8.18 |
| PSi | 3.14 | 1.76 | 2.01 | Direct | 224 | 200 | 6.39(λb) | 0.77(λb) | 606 | 3.68 | 12.66 |
| 6.85(λg) | 2.42(λg) | ||||||||||
| 6.44(λr) | 6.82(λr) | ||||||||||
| PbSi | 2.33 | 1.90 | 2.47 | Direct | 302 | 185 | 4.32(λb) | 4.22(λb) | 495 | 4.62 | 26.85 |
| 0.85(λg) | 0.78(λg) | ||||||||||
| 2.94(λr) | 0.77(λr) | ||||||||||
| SbSi | — | — | 2.01 | Indirect | — | — | — | — | — | — | — |
| SnSi | 2.71 | 1.85 | 2.50 | Direct | 259 | 190 | — | — | 490 | 4.73 | 11.29 |
| TeSi | 6.28 | 1.69 | 1.38 | Direct | 112 | 208 | — | — | 871 | 2.38 | 10.41 |
| CaSi | 2.94 | 14.5 | 2.31 | Direct | 239 | 24 | 4.56(λb) | 7.5(λb) | 529 | 4.15 | 16.03 |
| 4.65(λg) | 1.77(λg) | ||||||||||
| 2.95(λr) | 1.65(λr) | ||||||||||
| KSi | 2.22 | 15.98 | 1.85 | Direct | 316 | 22 | 4.79(λb) | 8.13(λb) | 660 | 3.15 | 22.57 |
| 7.47(λg) | 1.76(λg) | ||||||||||
| 4.38(λr) | 0.96(λr) | ||||||||||
| MgSi | 3.44 | 2.74 | 2.49 | Direct | 204 | 128 | 4.51(λb) | 5.18(λb) | 492 | 4.69 | 21.46 |
| 2.36(λg) | 1.29(λg) | ||||||||||
| 0.08(λr) | 1.50(λr) | ||||||||||
| NC | — | — | 2.54 | Indirect | — | — | — | — | — | — | — |
| BC | 2.87 | 2.59 | 2.13 | Direct | 245 | 135 | 7.01(λb) | 4.21(λb) | 570 | 3.93 | 20.48 |
| 4.65(λg) | 1.62(λg) | ||||||||||
| 3.24(λr) | 0.72(λr) | ||||||||||