Table 1.

Performance metrics for traditional and high-entropy oxide memristors

Material system	Representative material	Forming-free	ON/OFF ratio	Endurance	Retention	Switching speed/energy	Multilevel states	CMOS compatibility  CMOS	Refs.
Binary-oxides	HfO2	No	≈103–104	1.2 × 1011	3 × 108 s (ext.)	5 ns/–	24	Yes	[117]
	TiO2-C oO	Yes	~ 103	1 × 103	1 × 104 s	–/0.4 V, 2.5 µA (~ 1 µW)	✓ (via Vstop)	Yes	[118]
Perovskites	MAPbI3 quantum wires	Yes	1 × 107	6 × 106	> 2 years (ext.)	~ 100 ps/–	4	Limited	[119]
2D Materials	MoS2	No	~ 105	–	104 s	ns/–	5	Limited	[120]
Organic polymers	Hetero-electrolyte polymer	No	1 × 103	2 × 102	–	–	–	Limited	[121]
HEOs	(Zr, Hf, Nb, Ta, Mo, W)2O5−x	Yes	6–15	7 × 104	7.2 × 104 s	–	64	Yes	[33]
	(Cr, Mn, Fe, Co, Ni)3O4	Yes	1 × 105	4.5 × 103	> 104 s	–	32 (analog)	Yes	[32]