Table 2.
Comparative performance metrics and limitations of Pb-based and lead-free (Sn-based, Bi-based) halide perovskite memristors
| Property | Pb-based (MAPbI3, CsPbI3) | Sn-based (FASnI3, etc.) | Bi-based (Cs2AgBiBr6, etc.) |
|---|---|---|---|
| Endurance | ~ 1,000–10,000 cycles | ≤ 100 cycles (limited by Sn2+ oxidation) | ~ 100 cycles (literature reported) |
| Retention | > 10,000 s | ~ 1,000–10,000 s (unstable in air) | ~ 1,000 s (reported) |
| Switching Energy | < 10 pJ | 10–100 pJ | > 100 pJ (due to low conductivity) |
| Environmental Stability | Low (improved by encapsulation) | Unstable (oxidation, moisture-sensitive) | High (good moisture resistance) |
| Charge Mobility | High (~ 1 cm2/Vs) | Moderate to low (defects, oxidation) | Very low (< 10−4 cm2/Vs) |
| Ref | [61, 68, 204, 205] | [205, 206] | [148, 205] |