Skip to main content
. 2025 Aug 22;18(17):3940. doi: 10.3390/ma18173940
RS Resistive switching
MIM Metal–Insulator–Metal
RRAM Resistive random-access memory
CMOS Complementary Metal-Oxide-Semiconductor
SRAM Static random-access memory
DRAM Dynamic random-access memory
XPS X-ray photoelectron spectroscopy
XRD X-ray diffraction
MRAM Magnetic random-access memory
PCM Phase-change memory
FeRAM Ferroelectric random-access memory
HRS High-resistive state
LRS Low-resistive state
BEOL Back-end of line
BE Bottom electrode
TE Top electrode
PVD Physical Vapor Deposition
sccm standard cubic centimeter
Re(ε) Real part of relative permittivity
DI deionized
BE Binding Energy
C2C Cycle to cycle
D2D Device to device