| RS | Resistive switching |
| MIM | Metal–Insulator–Metal |
| RRAM | Resistive random-access memory |
| CMOS | Complementary Metal-Oxide-Semiconductor |
| SRAM | Static random-access memory |
| DRAM | Dynamic random-access memory |
| XPS | X-ray photoelectron spectroscopy |
| XRD | X-ray diffraction |
| MRAM | Magnetic random-access memory |
| PCM | Phase-change memory |
| FeRAM | Ferroelectric random-access memory |
| HRS | High-resistive state |
| LRS | Low-resistive state |
| BEOL | Back-end of line |
| BE | Bottom electrode |
| TE | Top electrode |
| PVD | Physical Vapor Deposition |
| sccm | standard cubic centimeter |
| Re(ε) | Real part of relative permittivity |
| DI | deionized |
| BE | Binding Energy |
| C2C | Cycle to cycle |
| D2D | Device to device |