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Electrical characterization of WSe2 field-effect transistors (FETs) fabricated on SiO2 and hBN substrates. (a) Schematic illustration of WSe2 FETs on SiO2 and hBN substrates. (b) Optical image of the fabricated devices. (c) High-resolution transmission electron microscopy (HRTEM) image of WSe2/hBN heterostructures fabricated using a dry transfer technique. (d, e) Transfer characteristics of WSe2/SiO2 and WSe2/hBN FETs at a drain-source voltage (V ds) of 1 V.
