1. Comparison of Gas Sensing Performance of 2D Material-Based Sensors with the Present WSe2/hBN FET Device.
| 2D material | morphology | device type | gas concentration (ppm) | working temperature (°C) | response (%) | LoD (ppm) | gas detected | response time | refs |
|---|---|---|---|---|---|---|---|---|---|
| WSe2 | nanoflower | chemiresistive | 0.8 ppm | 100 | 20.5 | 0.1 | NO2 | 196 s | |
| WSe2 | monolayer | chemiresistive | 2 | RT | 18.8 | NO2 | 24 min | ||
| WSe2 | trilayer | chemiresistive | 500 | RT | 4140 | NO2 | 15 min | ||
| WSe2 | nanoflower | chemiresistive | 2 | 120 | 45 | 0.1 | NO2 | ||
| MoS2 | four layers | FET | 5 | RT | 59.4 | 5 | NO2 | 24s | |
| WSe2 | thin film | chemiresistive | 20 | 250 | 88.89 | 0.1 | NO | 109s | |
| WSe2 | liquid exfoliated nanosheet | chemiresistive (optically activated) | 10 | RT | 436 | 0.08 | NO2 | ||
| WSe2 | bulk flake | FET | 1 | RT | 350 | 1 | NO2 | ||
| MoS2 | bilayer | FET | 200 | RT | 100 | 100 | NO2 | ||
| WSe2 (hBN substrate) | few layers (8 layers) | FET (optically tunable) | 10 | RT | 6000 (in %), tunable (10,000– 0) | <2 | NO x (NO2+NO) | 12 min | this work |