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. 2025 Aug 5;28(9):113260. doi: 10.1016/j.isci.2025.113260

Table 3.

Summary on YGBCO performance and PLD techniques and parameters used for deposition

Superconductor Method Conditions Critical Temperature Critical Current Density Substrate References
Y0.5Gd0.5Ba2Cu3O7-δ (YGBCO) PLD KrF excimer laser (λ = 248 nm),;
Laser energy fluence: 1.0 J/cm2;
Substrate - target distance: 30 mm;
Repetition frequency of laser: 100 Hz;
Oxygen pressure: 200 mTorr;
Thickness YGBCO was maintained at 250 nm by control of the deposition time.		 4 g/cm3 – 91.3 K 4 g/cm3 – 5.4 MA/cm2 (77 K, self-field) CeO2/MgO/Y2O3/Al2O3 buffered C276 Liu et al.83
Y0.5Gd0.5Ba2Cu3O7-δ (YGBCO)
YGBCO/Gd-CeO2/YGBCO		 PLD KrF excimer laser (LPX220);
Laser pulse repetition rate: 40–150 Hz239;
Oxygen partial pressure and laser energy were optimized.		 NA 140 A at self-field, 77 K (optimal PLD parameters) CeO2/IBAD-MgO/Y2O3/Al2O3/Hastelloy C276 Liu et al.172
Y0.5Gd0.5Ba2Cu3O7-r (YGBCO) Multi target reel-to-reel PLD with seed layer From Ref.83 KrF excimer laser (λ = 248 nm);
Laser energy fluence: 1.0 J/cm2;
Target-substrate distance: 30 mm;
Repetition frequency: 100 Hz;
Oxygen pressure: 200 mTorr;
The thickness of the YGBCO films was maintained at 250 nm by control of the deposition time.		 NA 77 K, self-field
No seed: 3.17 MA/cm2;
S1 (seed 2 nm): 3.33 MA/cm2
S2 (seed 7 nm): 3.33 MA/cm2;
S3 (seed 15 nm): 4.17 MA/cm2;
S4 (seed 30 nm): 3.67 MA/cm2 		CeO2/IBAD-MgO/Y2O3/Al2O3/Hastelloy C276 Yao et al.151
Y0.5Gd0.5Ba2Cu3O7-δ (YGBCO) with 5mol % BaHfO3 (BHO) MPMT-PLD Laser power 380 W >90 K >300 A/cm (77 K, self-field) CeO2/IBAD-MgO/Y2O3/Al2O3/Hastelloy Li et al.179
Y0.6Gd0.6Ba2Cu3O7 Reel-to-reel MPMT-PLD KrF excimer laser (LAMBDA 300 K);
Deposition temperature: 900°C;
High traveling speed of the tape: ∼100–150 m/h;
Oxygen partial pressure: 500 mTorr;
Laser energy: 500–700 mJ;
Laser pulse repetition rate: 200 Hz;
For improved PLD a thermal shield under the heating cylinder to minimize the temperature variation was added.		 ∼87 K 77 K, self-field: 380 A/cm CeO2/IBAD-MgO/Y2O3/Al2O3/Hastelloy Zhao et al.146
Y0.5Gd0.5Ba2Cu3O7−δ (YGBCO) doped with 5 mol % BaHfO3 (BHO) PLD seed layer technique KrF excimer laser (λ = 248 nm);
Laser energy density: 1.0 J/cm2;
Substrate-target distance: 40 mm;
Oxygen pressure: 200 mTorr;
Firstly, 2-nm-thick 5-mol% YGBCO+BHO seed layer was fabricated at a laser repetition rate of 10 Hz and substrate temperatures (710°C–820°C).
Secondly, 200-nm-thick YGBCO+BHO upper layers were grown at a laser repetition rate of 160 Hz of one plume and 820°C.		 Best performing (790°C with seed layer):
90 K		 Best performing (790°C with seed layer, in self-field at 77 K):
4 MA/cm2 		CeO2 (001)/IBAD- MgO/Y2O3/Al2O3/Hastelloy C276 Liu et al.81