Figure 2.

Excellent optical signal perception, PPC and programmability of light and electrical pulses based on In₂S_3–XAs_X. (a) Schematic diagram of an optoelectronic memristor based on In₂S_3–XAs_X. (b) Photocurrent curves for In₂S_3–XAs_X and In₂S₃; the red curve represents the photocurrent relaxation curve of In₂S_3–XAs_X (450 nm, 278 μW cm⁻² for 5 s), the purple curve is for In₂S₃ (450 nm, 278 μW cm⁻² for 15 s), the time coordinates of the two correspond to the red coordinate axis above, and the blue curve is the fitting result of In₂S_3–XAs_X (V_d = 1 mV), which corresponds to the blue logarithmic coordinate axis below. (c) Normalized photocurrent diagram of the In₂S_3–XAs_X; dark and light blue dots represent the normalized photocurrent before and after voltage application, respectively. (d) The PPC curves (V_d = 100 mV) under different intensities of optical pulses (450 nm, 5 s). (e) Programmable properties of device conductance by light pulse (30.8 μW cm⁻²) number (left) and light pulse (30.8 μW cm⁻²) width (right). (f) I–T curve under constant light intensity and voltage (450 nm, 116.7 μW cm⁻², V_d = 4.2 V). (g) The I–V cycling test curve graph, with positive and negative voltage cycling 100 times each; the inset shows the distribution of transition voltages. (h) The comparison diagram of I–V curves with different InAs doping contents (450 nm, 278 μW cm⁻²). (i) The comparison of the characteristic decay time and optical writing energy efficiency ratio of this study with previous research results.