Figure 3.

Characterization and theoretical calculation of In₂S_3–XAs_X. (a) Raman spectral mappings of In₂S₃ (left) and In₂S_3–XAs_X (right) under different analyzer polarizations, showing the effect of As doping on vibrational modes. (b) Angle-resolved Raman scattering intensities of the Eg(2) mode for In₂S₃ (left) and In₂S_3–XAs_X (right) in parallel and perpendicular configurations, indicating lattice symmetry changes due to doping. (c) Band structure and density of states curves of In₂S₃ (blue) and In₂S_3–XAs_X (red) calculated using the DMol³ method. (d) COHP calculation results of indium–oxygen bonds in In₂S₃ and In₂S_3–XAs_X. (e) In situ XPS spectra of O1s of In₂S_3–XAs_X in darkness and light. (f) Schematic diagram of the In₂S_3–XAs_X under illumination; illumination empties the donor-like states while ionizing the oxygen vacancy sites, thus converting them from deep neutral states into shallow doubly ionized donor states. (g) Surface potential mapping of In₂S_3–XAs_X nanowires measured by KPFM under sequential conditions: initial dark state, low-intensity light pulse, high-intensity light pulse, low-amplitude electrical pulse and high-amplitude electrical pulse. (h) Transient normalized PPC curves at different temperatures. (i) The resultant Arrhenius plot of the time constant for In₂S_3–XAs_X (upper area), The CCD below shows the electron-capture barrier fitted by Eq. (2).