Table 4. The process parameters for depositing ALD TiN films.
| Process parameter | Specification |
|---|---|
| Precursor 1 | TiCl4 |
| Precursor 2 | NH3 |
| Carrier gas | N2 |
| Pressure | <1 mbar |
| Temperature | 200–400 °C |
| Substrate | Glass and Si chips |
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