Fig. 11.

Schematic illustration of one-dimensional SiNW structures and properties. a Top: Fin-gate structure with aligned SiNW channels. Bottom: Ids-Vds output and transfer characteristics of SiNW TFTs. Reproduced with permission [175].

Copyright 2023, John Wiley and Sons. b Left: Pulling stretchable crystalline silicon (c-Si) nanowire springs out of running catalyst droplets. Right: SEM images of SiNWs. Reproduced with permission [176]. Copyright 2017, American Chemical Society. c Left: Fabrication of single-nanowire-morphed robotic grippers. Right: Elastic deformation, structural stability, and force gauging behavior of the nanowire gripper. Reproduced with permission [177]. Copyright 2023, Springer Nature. d Top: SEM images of SiNix nanospring arrays. Bottom: Microscopic images showing the geometric evolution of a SiNix-NS interconnection. Reproduced with permission [178]. Copyright 2021, John Wiley and Sons. e Left: Step-necking growth of ultrathin and short SiNW channels. Right: SEM image of SiNWs. Reproduced with permission [179]. Copyright 2025, Springer Nature. f Left: SEM images of SiNHs with forward- or reverse-line feeding growth symmetry. Right: Two distinct resonant frequencies corresponding to the swaging resonant modes of the SiNHs. Reproduced with permission [180]. Copyright 2020, American Chemical Society