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. 2026 Jan 12;18:188. doi: 10.1007/s40820-025-02035-1

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© The Author(s) 2026

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 14 — PUF implementation by using tunable memristors with self-rectification effect. a DC I–V curves of the SRMs with specific component. b Conducting mechanism of the device when presenting the self-rectification effect. c Entropy source for PUF implementation. d 4 × 4 PUF map based on random switching. e Concealing process of the proposed PUF implementation based on SRMs. f Reconfiguring process of the proposed PUF implementation based on SRMs. g Bit error rate of ten concealing-revealing cycles. Reproduced from [47], with permission from Springer Nature