Fig. 8.
A novel ANN accelerator based on 1-kb SRM array. a Schematic diagram of 1/3 bias scheme of the passive crossbar array. b DC I–V curves of HfSiOx-based SRMs. c Cumulative probability of resistance states in the 1-kb crossbar array with low device-to-device variation less than 6%. d Schematic diagram of downscaling. e Schematic diagram of VMM operation based on 1-kb passive crossbar array. f DC I–V curves of one memristor without rectification (left). The cumulative probability distribution of the read current where each state is extracted from the DC I–V curves (right). g DC I–V curves (left) of memristors in an 8 × 8 passive crossbar array. The cumulative probability distribution of the read current for each state is extracted from the DC I–V curves (right). Reproduced from [32], with permission from Springer Nature