Fig. 9.
Hardware-level ADS system based on SRMs. a I–V characteristics of TiN/HfOx/Pt SRMs operating under a 1/6 voltage scheme, demonstrating an exceptional rectification ratio of ~ 108 and nonlinearity of 105. b Progressive evolution of I–V curves under continuous unidirectional voltage sweeps, illustrating the synaptic conductance modulation. c Endurance performance showcasing stable rectification ratio retention through 107 programming cycles, confirming exceptional cycling reliability. d LTP and depression LTD characteristics demonstrating synaptic weight modulation in the SRMs under 20-μs programming pulses. e Statistical analysis of cycle-to-cycle conductance variations during repetitive weight updates, highlighting the exceptional stability (1.55% variation) at 20-μs pulse intervals. f Device-to-device uniformity assessment across a 32 × 32 crossbar array, revealing minimal variation (3.32%) that ensures reliable parallel operation in neuromorphic computing applications. g Schematic diagram and flowchart of the hardware-software cooperative anti-attack ADS based on the proposed single-layer SRMs. Reproduced from [51], with permission from Springer Nature