Table 1.
Comparison of all key parameters of advanced SRMs
| Structure | Year | RR | NL | On/off Ratio |
Leakage Current |
Operating Voltage |
Speed | Retention | Endurance | Scalability | Applications for beyond CMOS | CMOS Compatibility |
Refs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Ta/HfOx/ZrOy/Pt | 2025 | 104 | 7 × 103 | 8 × 104 | < 1 pA | 2.5 V | 2 μs | 104 s | 104 | – | – | Yes | [60] |
| Ag/CZTSSe/Mo | 2025 | 1.5 × 103 | - | 1.5 × 103 | > 10 μA | 0.3 V | – | – | 150 | – | Security | No | [80] |
| Pt/TaOx/TiN | 2025 | 107 | 107 | - | < 1 nA | 0.8 V | 0.5 ms | – | – | – | RC | Yes | [81] |
| Pt/HfO2/Ta2O5−x/Ti | 2025 | 104 | 104 | 103 | < 10 pA | 3 V | 0.5 ms | 104 s | 105 | 96 Kb | Flexible | Yes | [82] |
| Pt/HfO2/TiN | 2025 | 108 | 105 | 10 | < 0.1 pA | 1.5 V | 1 ms | – | 107 | 25.4 Tb | ADS | Yes | [51] |
| TiN/ANTO/TiN | 2025 | 104 | 104 | 100 | < 1 pA | 1 V | 10 ms | 104 s | 3.5 × 104 | – | ANN | No | [83] |
| Ag/P(VDF-TrFE):BA 2PbI4/ITO | 2025 | 106 | 106 | 106 | < 10 pA | 0.1 V | – | 104 s | 200 | – | – | No | [66] |
| Pt/HfO2/Ti | 2025 | 105 | 103 | 103 | < 10 pA | 1.5 V | – | 103 s | 100 | 8.9 Mb | CNN | Yes | [84] |
| Pd/TiO2/Ti | 2025 | 7 × 106 | – | 100 | < 1 pA | 3 V | 1 μs | – | 2 × 104 | – | Self-supervised learning | Yes | [46] |
| Pt/WO3/WO3-x/TiN | 2024 | 105 | 105 | 103 | < 1 nA | 2.5 V | – | 106 s | 104 | 180.3 Gb | ANN | Yes | [31] |
| Pt/Bi2O2Se/β-Bi2SeO5/Au | 2024 | 105 | 105 | 105 | < 10 pA | 3 V | 20 ns | – | – | – | – | No | [40] |
| Pt/HfO2/WO3-x/TiN | 2024 | 106 | 105 | – | < 1 pA | 2 V | 0.5 ms | 5 × 104 s | 106 | 21 Gb | ANN | Yes | [29] |
| Pt/ZnO/WO3-x/Ta | 2024 | 106 | 100 | 10 | < 10 pA | 2 V | 1 ms | 106 | 103 | – | RC | Yes | [30] |
| Pt/HfO2/CuTeHO | 2024 | 105 | – | 105 | < 1 pA | 5 V | 0.3 ms | 103 s (100 ℃) | 106 | – | Hardware security | No | [47] |
| Au/FeOx/HfOx/Ag | 2024 | 103 | – | 104 | < 1 μA | 2 V | 50 ns | – | 104 | – | CNN | No | [85] |
| Ru/NbOx/TiO2/TiN (16 layers) | 2024 | 107 | 105 | – | < 10 pA | 2 V | 600 ps | 104 s | 1010 | 4 Tb | ANN | No | [49] |
| Pt/TiO2/NiO/ITO | 2024 | 103 | 104 | – | < 1 nA | 3 V | – | 103 s | – | – | Optoelectronic ANN | Yes | [86] |
| TiN/TiO2/NbOx/NiO/Ru | 2024 | 105 | 104 | – | < 0.1 nA | 2 V | – | – | – | 1 Tb | Optoelectronic RC | No | [37] |
| Au/TiO2: Na,Al/Au | 2024 | 104 | – | 100 | < 0.1 nA | 2 V | 5 μs | 7 × 104 s (125 ℃) | 5 × 105 | – | ANN | No | [61] |
| Au/ Perovskite/ITO | 2024 | 514 | – | 103 | < 10 nA | 3 V | – | 104 s (85 ℃) | 104 | 3 Mb | – | No | [87] |
| Pt/NbOx/Ti | 2024 | 100 | 10 | 10 | < 0.1 mA | 4 V | 1 ms | – | 103 | – | RC | No | [88] |
| Pt/Al2O3//HfOx/TiOx/Al | 2024 | 10 | – | – | < 10 μA | 3 V | 1 μs | – | 103 | 1 Kb | RC | Yes | [89] |
| Ru/Hf0.8Si0.2O2/Al2O3/Hf0.5Si0.5O2/TiN | 2024 | 103 | 102 | – | < 10 pA | 3 V | 100 μs | 104 s (85 ℃) | 106 | – | ANN | Yes | [32] |
| Au/TiOx/FTO | 2024 | 100 | 103 | – | < 10 μA | 2 V | – | – | – | – | Optoelectronic RC | No | [90] |
| Pt/WOx/W (3 layers) | 2024 | 4.8 × 102 | – | 4.1 × 102 | < 1 nA | 1.5 V | 0.5 ms | – | 105 | – | RC | Yes | [45] |
| Pt/TiO2-x: F/Ti | 2024 | 105 | – | 104 | < 0.1 nA | 3 V | 77 ns | – | 106 | – | – | No | [42] |
| Pt/NiOx/ WO3−x: Ti/W | 2023 | 102 | 100 | 10 | < 0.1 nA | 3 V | 500 ms | – | 500 | – | SOM | Yes | [33] |
| Pt/HfO2/TaOx/Ta (2 layers) | 2023 | 104 | 104 | 10 | < 10 pA | 5 V | 200 ns | 104 s (85 ℃) | 105 | 1.56 Gb | – | Yes | [91] |
| Pt/Ta2O5/ HfO2: Al/TiN (2 layers) | 2023 | 104 | 104 | 103 | < 10 pA | 10 V | – | 100 s | 100 | – | Logic | Yes | [92] |
| Pt/HfO2/TaOx/Ta | 2023 | 104 | 104 | 103 | < 0.1 pA | 6 V | 1 μs | 3 × 104 s (125 ℃) | 106 | 95 Mb | Sparse matrix multiplication | Yes | [17] |
| Pt/Ta2O5/Nb2O5-x/Al2O3-y/Ti | 2023 | 5 × 104 | – | 103 | < 0.1 nA | 10 V | 10 ms | 2 × 105 s (150 ℃) | 105 | – | ANN | No | [93] |
| Pt/Al2O3/HfO2/TiN | 2023 | 106 | 103 | – | < 1 pA | 3.5 V | – | 103 s | 106 | – | Graph analysis | Yes | [35] |
| TiN/ TiOxNy/TiOx/NbOx/Ru | 2023 | 106 | 5 × 103 | – | < 1 pA | 2.5 V | 200 ns | 104 s (125 ℃) | 108 | 10 Gb | – | No | [53] |
| Ru/HfZrO/TiN | 2022 | 100 | 100 | 10 | < 10 pA | 3.5 V | 1 μs | – | – | – | RC | Yes | [94] |
| Pt/Al2O3/TaOx/Ta | 2022 | 104 | 104 | 103 | < 0.1 pA | 10 V | 20 ms | 104 s (125 ℃) | 104 | 538 Mb | – | Yes | [70] |
| Pt/TiO2: Na/Pt | 2022 | 104 | 104 | – | < 0.1 nA | 10 V | 5 ms | 105 s | 104 | – | CNN | No | [36] |
| Pt/HfO2/Nb2O5/HfO2/Ti | 2022 | 105 | – | – | < 10 pA | 7 V | – | 103 s | 104 | – | Stashing | No | [63] |
| Au/TaOx/Al2O3/TiN | 2021 | 73 | 236 | 100 | < 1 nA | 3 V | 80 μs | 2.5 × 103 s | 100 | 160 Kb | – | Yes | [64] |
| Pt/TaOx/Ta | 2021 | 105 | 105 | 104 | < 10 pA | 14 V | – | 104 s (85 ℃) | 103 | 160 Mb | Logic | Yes | [57] |
| Au/h-BN/graphene/h-BN/Ag | 2019 | 1010 | – | 103 | < 10 fA | 5 V | 50 ns | 106 s | 106 | 1 Tb | MVM | No | [41] |
| TiN/HfO2/TaOx/Ti/TiN/W (8 layers) | 2017 | 100 | 100 | 100 | < 10 pA | 6 V | 300 ns | 104 s (125 ℃) | 107 | – | – | Yes | [95] |
| Pt/Ta2O5/ HfO2/TiN | 2016 | 2 × 103 | – | – | < 1 pA | 15 V | – | 104 s (125 ℃) | 103 | – | – | Yes | [39] |
| Pt/NbOx/TiOy/NbOx/TiN | 2016 | 105 | 10 | – | < 1 pA | 12 V | - | 3 × 103 s | 104 | 1 Mb | – | No | [43] |
| Ru/HfO2/TiOx/TiN | 2016 | 103 | 103 | – | < 0.1 pA | 3 V | 400 ns | 104 s | 107 | 10 Mb | – | Yes | [96] |
| TiN/ HfO2/HfO2: Si/TiN | 2016 | 300 | 300 | 10 | < 1 pA | 5 V | – | 108 s | – | – | – | Yes | [97] |
| Pt/Ta2O5/HfO2−x/Ti | 2015 | 106 | – | 106 | < 1 pA | 8 V | – | 104 s (200 ℃) | – | – | – | Yes | [44] |
| TiN/HfO2/CuGeS/W | 2015 | 103 | 103 | 103 | < 0.1 pA | 4 V | 1 μs | 104 s | 107 | 10 Mb | – | No | [98] |