Fig. 2. Relationship between intrinsic gain and cut-off frequency in MoS₂ SGT operating in the subthreshold region as L_CH decreases.

a Transfer characteristics (I_DS–V_GS) at channel lengths (L_CH) of 1000, 800, 600, 400, and 200 nm. I_DS represents the drain current. b Output characteristics (I_DS–V_DS) corresponding to (a). Extracted transconductance (g_m) (c), output resistance (R_OUT) (d), and intrinsic gain (A_i) (e) corresponding to (a, b). f Benchmarks of A_i vs. L_CH for state-of-the-art TFTs for this work. HZO GI, ferroelectric HfZrO_x gate insulator. g Small-signal current gain |h₂₁| versus frequency for five SGTs at channel lengths of 1000, 800, 600, 400, and 200 nm, respectively. V_GS and V_DS is biased to 0.5 and 1.0 V during the frequency measurement process, respectively. f_T represents the cut-off frequency. h Unilateral power gain U^1/2 versus frequency for SGTs corresponding to (g). i f_T extracted from (g) as a function of L_CH.