Fig. 3. MoS2 SGT subthreshold performance with sub-100 nm channel.
a Transfer characteristic of MoS2 SGT with LCH of 80 nm at VDS = 0.1, 0.7, and 1.0 V. Dashed lines denote gate leakage current. DIBL represents the drain-induced barrier lowering, SS represents the subthreshold swing, and IGS represents the gate leakage current. b Output characteristics of the device in (a). From top to bottom, VGS is 0.5 V down to −0.2 at −0.1 V step. c Extracted values of gm (black circles) and ROUT (blue circles) as a function of VGS at VDS = 1 V, scaled by 1011 and 10−8, respectively, for better visual comparison. d Intrinsic gain (Ai = gm × ROUT) calculated from (c) as a function of VGS. e Small-signal current gain |h21| versus frequency for the MoS2 SGT, where VDS = 1.0 V and VGS changes from 0 to 2 V in step of 0.5 V. f Unilateral power gain U1/2 versus frequency for the MoS2 SGT, where VDS = 1.0 V and VGS changes from 0.5 to 2 V in steps of 0.5 V. fMAX represents the maximum oscillation frequency. g fT and fmax as a function of VGS. h Measured current noise of MoS2 SGTs for different LCH, where the direct current biases (IDC) is 100 nA. Inset: current noise as a function of LCH at f = 100 Hz. i MoS2 SGT current noise measured at different IDC for LCH = 80 nm.