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. 2026 Mar 6;12(10):eaeb5852. doi: 10.1126/sciadv.aeb5852

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Fig. 2. — (A) Transfer characteristics of a representative flexible CNT-TFT with L_ch = 5 μm and W_ch = 50 μm. (B) Output characteristics of the CNT-TFT in/around the subthreshold region. The gray arrow indicates the sweep direction of V_gs. (C) Two-dimensional (2D) color plot of output conductance g_ds as a function of V_ds under different V_gs of the CNT-TFT. The NDR/PDR transition boundary is indicated by gray dashed lines. (D) Schematic band diagrams illustrating the hole depletion and conduction type inversion near the drain side with increased |V_ds|. (E) Output characteristics of a CNT-TFT (L_ch = 20 μm) at V_gs = −5 V (top) and the false-color near-infrared EL intensity images at corresponding V_ds (bottom). Scale bar, 5 μm.