Table 2. Refined structure factor for Si 111 and 222 at 300 kV.

Method				GOF
IAM	0.05749	0.00047	0	–
X-ray (Zuo et al., 1997 ▸)	0.05434	–	0.001082	–
CBED	0.05430	0.00091	0.001055	2.8
LARBED	0.05449	0.00067	0.001191	0.6