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. 2002 Sep 16;99(20):13284–13289. doi: 10.1073/pnas.192242399

Figure 1.

Figure 1

FHM mutations increase Ba2+ influx through single human CaV2.1 channels. (A Top Left) Whole-cell recordings with 5 mM Ba2+ as charge carrier. Whole-cell current densities during voltage ramps were measured in HEK293 cells expressing human wt and mutant V1457L (VL) and T666M (TM) CaV2.1 channels. Maximal current densities in cells transfected with α1A-2 and α1A-2 (-VEA) cDNAs were 70.6 ± 12.0 pA/pF, n = 52, and 71.6 ± 11.3 pA/pF, n = 31, respectively. Identical normalized current density-voltage (I-V) curves were measured for the two wt isoforms (n = 9 and n = 12, respectively). Maximal current densities of the α1A-2TM and α1A-2 (-VEA) VL mutants were 10.7 ± 0.9 pA/pF (n = 53) and 22.7 ± 3.1 pA/pF (n = 32), respectively. The I-V curves of the mutants were divided by the maximal current density of the corresponding wt channels. (A Bottom Left) Single-channel cell-attached recordings on HEK cells expressing wt and mutant VL channels; 90 mM Ba2+ as charge carrier. Holding potential = −80 mV. Representative current traces from single-channel patches containing a wt CaV2.1 channel (cell X24A) or a VL mutant (cell A07B). (Bars = 0.5 pA, 40 ms.) (A Right) Unitary current, i, and open probability, po, as a function of voltage, for wt and VL mutant channels. (Top) Average I-V curves from 19 (wt) and 11 (VL) patches. (Inset) Unitary activity at 20 mV on an expanded time scale. (Bars = 0.3 pA, 10 ms.) (Bottom) Average po-V curves from 12 (wt) and 10 (VL) patches containing a single channel. The data points were best fitted by Boltzmann distributions with V1/2 = 34.5 mV (k = 6.2) for wt and V1/2 = 27.4 mV (k = 7.2) for VL. (B) Single-channel cell-attached recordings (90 mM Ba2+) on HEK cells expressing wt and mutant TM, VL, R192Q (RQ), V714A (VA), and I1815L (IL) CaV2.1 channels. (Top) Product of i and po, as a function of voltage, for the wt channel and the five FHM mutants. All ipo values were divided by the maximal ipo value of the wt channel (−0.21 ± 0.01 pA). Values of i and po for RQ, VA, and IL mutants, and i for TM, were taken from ref. 18; po values for TM were obtained as described in the text. For the wt channel, the normalized ipo values were well fitted by the normalized whole-cell I-V curve, shifted by 26 mV toward more positive voltages (thick line). This shift accounts for the difference in surface potential in the single-channel and whole-cell recording solutions (90 vs. 5 mM Ba2+). (Bottom) Comparison of ipo values for the VL mutant, calculated by using either the po values measured in cell-attached recordings (○) or the po values derived from the wt po-V curve in Fig. 1A, shifted in the hyperpolarizing direction of 7.1 mV, corresponding to the difference in V1/2 activation estimated from fitting the whole-cell current densities of wt and VL channels with Eq. 1 (▴).