| 3D |
three-dimensional |
| 3D-AFM |
three-dimensional atomic force microscopy |
| 3D-SICs |
3D stacked ICs |
| AAO |
anodic aluminum oxide |
| AFM |
atomic force microscopy |
| AFP |
Atomic Force Profiler |
| AI |
artificial intelligence |
| ALD |
atomic layer deposition |
| ALE |
atomic layer etching |
| APT |
atom probe tomography |
| BEOL |
backend-of-line |
| CCP |
capacitively coupled plasmas |
| CD |
critical dimension |
| CD-SAXS |
critical dimension small-angle X-ray scattering |
| cryo-ALE |
cryogenic atomic layer etching |
| CMOS |
Complementary metal-oxide-semiconductor |
| CMP |
chemical mechanical polishing |
| CNM |
compliant nano-manipulator |
| CPEM |
Correlative Probe and Electron Microscopy |
| CW |
continuous wave |
| DRIE |
Deep Reactive Ion Etching |
| eCD |
enhanced CD |
| EELS |
electron energy loss spectroscopy |
| EFEM |
equipment front end module |
| ETD |
estimated tip diameter |
| F2F |
face-to-face |
| FA |
fast scanning actuator |
| FC |
fluorocarbon |
| FFTP |
Feed Forward Trajectory Planning |
| FIB |
Focus Ion Beam |
| FinFETs |
Fin Field-Effect Transistor |
| GAA |
gate-all-around |
| HAR |
high-aspect-ratio |
| HARPs |
High-Aspect-Ratio Probes |
| HBM |
high-bandwidth memory |
| HHCF |
height-height correlation function |
| HS-AFM |
high-speed AFM |
| HS Met. LR-AFM |
high-speed metrology large-range AFM |
| ICP |
Inductively Coupled Plasma |
| ICs |
integrated circuits |
| IE-AM |
Image Explorer for Advanced Metrology |
| LER |
Line Edge Roughness |
| LWR |
line width roughness |
| M3D |
monolithic 3D integration |
| MAFM |
miniaturized AFM |
| MEMS |
microelectromechanical System |
| ML |
machine learning |
| MOS |
metal-oxide-semiconductor |
| MOSFET |
Metal-Oxide-Semiconductor Field-Effect Transistor |
| MWCNT |
multiwall carbon nanotube |
| NBE |
neutral beam etching |
| OCD |
optical critical dimension |
| OES |
Optical Emission Spectroscopy |
| OFP |
optical fiber probes |
| OPC |
optical proximity correction |
| PECVD |
Plasma-Enhanced Chemical Vapor Deposition |
| PSD |
Power Spectral Density |
| QALE |
quasi-atomic layer etching |
|
average roughness |
|
root mean square roughness |
| RMS |
root mean square |
| ROM |
reduced order mode |
|
peak-to-peak roughness |
|
skewness |
|
kurtosis |
| SAMs |
self-assembled monolayers |
| SCEs |
short-channel effects |
| SEM |
scanning electron microscopy |
| SiP |
system-in-package |
| SNOM |
scanning near-field optical microscope |
| SoC |
system-on-chip |
| SPMs |
scanning probe microscopes |
| SWA |
sidewall angle |
| TEM |
transmission electron microscopy |
| TERS |
Tip-Enhanced Raman Spectroscopy |
| tilting-mAFM |
metrological tilting-AFM |
| TRS |
transitional rescan |
| TSVs |
through-silicon vias |
| TTM |
two-temperature model |
| ULK |
ultra-low-κ |
| ULSS-AFM |
Ultra-large scan size AFM |
| VIA |
Vertical Interconnect Access |
| VPS |
vector probing scanning |
| WIW |
within-wafer |