Table 1.
Specifications and Laser Parameters for 650 nm and 810 nm Diode Laser Groups.
| 810 nm Laser (Group A) | 650 nm Laser (Group B) | |
|---|---|---|
| Laser Type | Diode Laser | Diode Laser |
| Active Medium | Gallium Aluminum Arsenide (GaAlAs) | Indium Gallium Phosphide (InGaP) |
| Maximum Power Output | 5000 mW | 100 mW |
| Available Modes of Emission** | Pulsed & Continuous Wave | Continuous Wave |
| Beam Profile | Gaussian | Gaussian |
| Manufacturer | Elexxion, Germany | NILES, Egypt* |
| Wavelength | Infra-Red: 810 nm | Red: 650 nm |
| Power Output | 100 mW (0.1 W) | 100 mW (0.1 W) |
| Exposure Duration/point (s) | 60 s | 60 s |
| Energy per point (J) | 6 J | 6 J |
Energy Density fluence/point ( ) |
12
|
12
|
| Emission Mode Used in Study** | Continuous | Continuous |
Spot Size ( ) |
0.5 | 0.5 |
| Irradiated Points | 3 (occlusal, buccal, palatal) | 3 (occlusal, buccal, palatal) |
| Total Radiant Energy (J) | 18 J | 18 J |
Total Energy Density ( ) |
36
|
36
|
| Application Technique | Static Punch mode - contact | Static Punch mode - contact |
| Treatment Sessions | 6 sessions, 3 sessions/week | 6 sessions, 3 sessions/week |
*Device manufactured and calibrated by Dept. of Laser Applications in Engineering, National Institute of LASER Enhanced Sciences (NILES), Cairo University, Egypt.
**The Available Emission Modes details the manufacturer-specified options of the device, while the Emission Mode Used in Study specifies the setting selected for the treatment protocol in this clinical trial.