Fig. 1. Bio-inspired MoS₂ optoelectronic synaptic devices (OSDs) for extreme-environment applications.

a Schematic of a rover equipped with the device conducting planetary exploration under extreme temperatures (−190 °C to 450 °C). b–e Device architecture: b Three-dimensional schematic, where V_gs and V_ds denote the gate-source voltage and drain-source voltage, respectively. c Device photograph. d Cross-sectional schematic of the hexagonal boron nitride (h-BN)/graphene/MoS₂/h-BN heterostructure. e Optical microscope image, where S (source), G (gate), and D (drain) denote the respective electrodes. f High-resolution transmission electron microscopy (HRTEM) cross-sectional image of the heterostructure. g Comparison of broad-spectrum sensing performance (temperature vs. wavelength) between this work (red) and reported high-temperature optical devices (black). The dashed line indicates the trade-off between wavelength and working temperature. h Highly tunable synaptic memory behavior exhibiting transition from short-term to long-term plasticity tuned by gate voltage. i Concept of in-sensor processing demonstration. Synthetic input images (bright/dark light) are algorithmically processed using the experimentally measured linear and nonlinear photoresponse curves of the OSDs to generate high-fidelity and enhanced output images, respectively.