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. 2026 Aug 5;17:9430. doi: 10.1038/s41467-026-76364-z

Fig. 2. Robust extreme-temperature operation and broadband sensing of MoS₂ OSD.

Fig. 2

a Transfer curves at 450 °C and −190 °C after 30 min of continuous operation (Vds = 0.5 V). b Raman spectra of MoS2 channel before and after 5 h thermal treatment at 450 °C and −190 °C. c Schematic and structural characterizations of the protection mechanism. The top panel illustrates the device stability against O2 and H2O penetration for graphene versus metal contacts. The middle and bottom panels present the cross-sectional high-resolution transmission electron microscopy (HRTEM) images (h-BN/graphene vs. h-BN/Pt) and the surface atomic force microscopy (AFM) topography images (graphene vs. Pt electrode), respectively. d Transfer curves in dark, illuminated, and post-illumination states at 450 °C and −190 °C (Vds = 0.5 V). e Temperature-dependent photocurrent under 254 nm, 450 nm, and 530 nm illumination. f, g Time-resolved photoresponse at 450 °C (f) and −190 °C (g). h Radar chart benchmarking performance against state-of-the-art high-temperature OSDs.