| Method |
Key process |
Product characteristics |
Cost |
Industrial maturity |
|
| liquid-phase exfoliation (LPE) |
water-jet shear peeling |
highest quality (defects <0.1%), size <100 μm, layers>10 in generally by LPE |
low by LPE |
mass production by LPE |
| redox method |
Hummers’ oxidation + chemical reduction |
oxygen residues (C/O≈8:1), conductivity 102 S/m |
low |
mass production |
| CVD |
CH4 decomposition on Cu/Ni (1000°C) |
large-area (square meter scale), mobility >4000 cm2·V−1·s−1
|
medium (film) |
pilot-scale |
| SiC epitaxy |
SiC annealing (>1400°C) |
transfer-free but nonuniform thickness |
high |
research and development |
