FIGURE 3.

(A) Bode plot of the EIS of a DPTDC monolayer (★) and the same sample after 1 day of vesicle fusion (▪). Lines correspond to a fit using an equivalent circuit of a feed resistance in series with an RC element of the bilayer in series with an RC element of the SiO_X layer. (B) The fit to the measurement after vesicle fusion (solid line in A) yields R_SiOx = 26.7 MΩ, C_SiOx = 1.02 μF, R_bilayer = 1.56 MΩ, C_bilayer = 735 nF. Only one RC element representing the oxide layer with the attached SAM has been used to fit the substrate before vesicle fusion (dotted line in A): R = 88.5 MΩ, C = 987 nF.