Table 3.
Voltage dependence of activation of mutants in the IIS2 and IIS3 segments
| V1,½ (mV) | k1 (mV) | A1 | V2,½ (mV) | k2 (mV) | A2 | n | |
|---|---|---|---|---|---|---|---|
| E805R-Control | −21.6 ± 0.3 | 8.2 ± 0.3 | — | — | — | — | 15 |
| E805R-NP-Css IV 50 nm | −16.1 ± 1.3 | 6.6 ± 0.9 | 0.79 ± 0.11 | −49.4 ± 1.9 | 10.1 ± 1.7 | 0.21 ± 0.08 | 18 |
| E805R-Pre-Css IV 50 nm | −15.7 ± 1.6 | 4.3 ± 1.3 | 0.37 ± 0.08 | −46.1 ± 2.9 | 8.9 ± 1.3 | 0.62 ± 0.8 | 20 |
| D814R-Control | −26.2 ± 0.3 | 9.2 ± 0.2 | — | — | — | — | 7 |
| D814R-NP-Css IV 50 nm | −22.9 ± 2.2 | 6.9 ± 2.6 | 0.71 ± 0.10 | −45.2 ± 1.9 | 13.9 ± 1.6 | 0.28 ± 0.01 | 5 |
| D814R-Pre-Css IV 50 nm | −23.9 ± 2.1 | 7.9 ± 1.9 | 0.55 ± 0.07 | −52.3 ± 1.9 | 11.1 ± 1.7 | 0.44 ± 0.01 | 12 |
| E821R-Control | −29.8 ± 0.3 | 5.6 ± 0.3 | — | — | — | — | 7 |
| E821R-NP-Css IV 50 nm | −26.6 ± 2.2 | 5.9 ± 3.2 | 0.67 ± 0.05 | −51.4 ± 3.2 | 14.2 ± 2.8 | 0.32 ± 0.02 | 7 |
| E821R-Pre-Css IV 50 nm | −24.4 ± 2.1 | 6.1 ± 1.4 | 0.46 ± 0.14 | −55.1 ± 0.8 | 11.1 ± 0.7 | 0.53 ± 0.01 | 9 |
| D827R-Control | −18.9 ± 0.3 | 9.2 ± 0.2 | — | — | — | — | 13 |
| D827R-NP-Css IV 50 nm | −28.6 ± 0.6 | 11.9 ± 0.6 | — | — | — | — | 11 |
| D827R-Pre-Css IV 50 nm | −30.3 ± 0.7 | 10.1 ± 0.7 | — | — | — | — | 11 |