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. 2006 Jul 19;103(31):11452–11456. doi: 10.1073/pnas.0601675103

Fig. 2.

Fig. 2.

The electrodes are formed by cutting an individual, metallic SWNT. (A) A cut SWNT on a doped silicon wafer contacted by large metal pads. The cut nanotube serves as the S/D electrodes, and the silicon wafer acts as the global back-gate for the device. (B) SEM micrograph of an individual SWNT between gold electrodes after being oxidatively cut. (C) Electrical properties (ID vs. VG at VD = −50 mV) of a metallic tube before (black trace) and after (red trace) oxidative cutting.