Fig. 3.

Conductivity vs. temperature for three polymer electrolyte gated (circles) devices at V_sd = −1 V. All devices were cooled beforehand to ≈260 K while holding the gate bias constant at V_g = −3 V. The data for a device without the electrolyte layer (squares), gated instead by using the bottom contact (SiO₂, 200-nm thick), are shown at fixed V_sd = −60 V and varying V_g.